Patent classifications
C30B7/06
Method for metal layer formation
A method for forming a crystalline metal layer on a three-dimensional (3D) substrate is provided. The method includes applying crystal growth ink to a surface of the 3D substrate, wherein the crystal growth ink includes a metal ionic precursor and a structuring liquid; and exposing the 3D substrate to plasma irradiation from plasma in a vacuum chamber to cause the growing of a crystalline metal layer on the 3D substrate, wherein the exposure is based on a set of predefined exposure parameters.
METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE ON FLEXIBLE SUBSTRATE
The present disclosure relates to a method of preparing a single crystal perovskite on a flexible substrate.
METHOD OF PREPARING SINGLE CRYSTAL PEROVSKITE ON FLEXIBLE SUBSTRATE
The present disclosure relates to a method of preparing a single crystal perovskite on a flexible substrate.
REFINING METHOD
A refining method according to the present invention is a refining method for crystallizing a compound with at least one crystal form, including: setting, as a target wavelength, a specific infrared wavelength at which a specific crystal form precipitates from a solution of the compound dissolved in a solvent; and using an infrared radiation apparatus capable of emitting infrared radiation including the target wavelength to evaporate the solvent and precipitate the specific crystal form while irradiating the solution with infrared radiation including the target wavelength. The specific infrared wavelength is preferably set as the target wavelength based on an infrared absorption spectrum of the crystal form and the dissolution rate of the compound in the solvent.
CRYSTAL, METHOD OF PRODUCING CRYSTAL, AND METHOD OF SELF-ORGANIZING SILANOL COMPOUND
The present invention provides a crystal comprising a plurality of silanol compounds of at least one selected from the group consisting of a hexamer represented by following formula (1), an octamer represented by following formula (2), and a decamer represented by following formula (3) and having an interaction via a hydrogen bond by at least one hydroxy group between the silanol compounds.
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CRYSTAL, METHOD OF PRODUCING CRYSTAL, AND METHOD OF SELF-ORGANIZING SILANOL COMPOUND
The present invention provides a crystal comprising a plurality of silanol compounds of at least one selected from the group consisting of a hexamer represented by following formula (1), an octamer represented by following formula (2), and a decamer represented by following formula (3) and having an interaction via a hydrogen bond by at least one hydroxy group between the silanol compounds.
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SUPRAMOLECULAR TESSELLATION OF RIGID TRIANGULAR MACROCYCLES
Disclosed herein are crystalline compositions comprising tessellated rigid triangular macrocycles in a two-dimensional plane and methods of making the same.
SUPRAMOLECULAR TESSELLATION OF RIGID TRIANGULAR MACROCYCLES
Disclosed herein are crystalline compositions comprising tessellated rigid triangular macrocycles in a two-dimensional plane and methods of making the same.
PEROVSKITE SOLUTION FOR MAKING A PEROVSKITE LAYER AT HIGH SPEED
A Perovskite solution is described for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices. The Perovskite solution contains a solvent, an organic Perovskite precursor material, and an inorganic Perovskite precursor material, wherein the amount of solvent is greater than 30 percent by weight and the Perovskite solution has a total solids concentration that is between 30 percent and 70 percent by weight of the Perovskite solution's saturation concentration at a solution temperature of from 20 to 25 degrees Celsius.
PEROVSKITE SOLUTION FOR MAKING A PEROVSKITE LAYER AT HIGH SPEED
A Perovskite solution is described for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices. The Perovskite solution contains a solvent, an organic Perovskite precursor material, and an inorganic Perovskite precursor material, wherein the amount of solvent is greater than 30 percent by weight and the Perovskite solution has a total solids concentration that is between 30 percent and 70 percent by weight of the Perovskite solution's saturation concentration at a solution temperature of from 20 to 25 degrees Celsius.