There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.

A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.

A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

A method for manufacturing a perovskite crystal structure includes preparing a substrate, disposing a stamp having a roll shape on the substrate, injecting a perovskite precursor solution between the substrate and the stamp, and drying the precursor solution to manufacture a perovskite crystal structure. The stamp rolls in a first direction on the substrate, and the precursor solution is continuously crystallized in the first direction between the substrate and the stamp to manufacture the perovskite crystal structure.

A method for manufacturing a perovskite crystal structure includes preparing a substrate, disposing a stamp having a roll shape on the substrate, injecting a perovskite precursor solution between the substrate and the stamp, and drying the precursor solution to manufacture a perovskite crystal structure. The stamp rolls in a first direction on the substrate, and the precursor solution is continuously crystallized in the first direction between the substrate and the stamp to manufacture the perovskite crystal structure.

Disclosed is an -phase nickel hydroxide and a preparation method and use thereof. The method for preparing an -phase nickel hydroxide comprises the following steps: subjecting a biomass calcium source to a calcination to obtain a porous calcium oxide; under a protective atmosphere, mixing the porous calcium oxide with a first methanol-ethanol solvent to obtain a calcium oxide heterogeneous solution; under a protective atmosphere, mixing the calcium oxide heterogeneous solution with a nickel source homogeneous solution to obtain a mixture, and subjecting the mixture to a coprecipitation to obtain a nickel calcium hydroxide precursor, wherein the nickel source homogeneous solution is prepared with a nickel source containing crystal water as a solute and a second methanol-ethanol solvent as a solvent; and subjecting the nickel calcium hydroxide precursor to a calcium hydroxide removal treatment to obtain the -phase nickel hydroxide.

Disclosed is an -phase nickel hydroxide and a preparation method and use thereof. The method for preparing an -phase nickel hydroxide comprises the following steps: subjecting a biomass calcium source to a calcination to obtain a porous calcium oxide; under a protective atmosphere, mixing the porous calcium oxide with a first methanol-ethanol solvent to obtain a calcium oxide heterogeneous solution; under a protective atmosphere, mixing the calcium oxide heterogeneous solution with a nickel source homogeneous solution to obtain a mixture, and subjecting the mixture to a coprecipitation to obtain a nickel calcium hydroxide precursor, wherein the nickel source homogeneous solution is prepared with a nickel source containing crystal water as a solute and a second methanol-ethanol solvent as a solvent; and subjecting the nickel calcium hydroxide precursor to a calcium hydroxide removal treatment to obtain the -phase nickel hydroxide.

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production. A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

The present specification provides a NOx responsive element suitable for directly sensing NOx. The NOx responsive element an oxygen ion conductive layer has a first electrode layer having a nitrogen oxide decomposition catalyst phase composed of perovskite-type oxide, being in contact with the oxygen ion conductive layer, and being exposed to NOx, and a second electrode layer opposing the first electrode layer across the oxygen ion conductive layer. The nitrogen oxide decomposition catalyst phase has a nitrogen oxide adsorption stabilizing surface on its surface exposed to nitrogen oxide.

The present specification provides a NOx responsive element suitable for directly sensing NOx. The NOx responsive element an oxygen ion conductive layer has a first electrode layer having a nitrogen oxide decomposition catalyst phase composed of perovskite-type oxide, being in contact with the oxygen ion conductive layer, and being exposed to NOx, and a second electrode layer opposing the first electrode layer across the oxygen ion conductive layer. The nitrogen oxide decomposition catalyst phase has a nitrogen oxide adsorption stabilizing surface on its surface exposed to nitrogen oxide.