A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga):
Si.sub.aM1.sub.bM2.sub.cM3.sub.d  Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga):
Si.sub.aM1.sub.bM2.sub.cM3.sub.d  Formula 1 wherein a is 0.3 to 0.8, b is 0.1 to 0.5, c is 0.01 to 0.3, d is 0.01 to 0.2, and a+b+c+d is 1.

Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.

Provided are an SiC single-crystal ingot containing an SiC single crystal having a low threading dislocation density and low resistivity; an SiC single crystal; and a production method for the SiC single crystal. The SiC single crystal ingot contains a seed crystal and a grown crystal grown by a solution process in which the seed crystal is the base point, the grown crystal of the SiC single crystal ingot containing a nitrogen density gradient layer in which the nitrogen content increases in the direction of growth from the seed crystal.

A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate 14 is contacted with a Si—C solution 24 having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises: using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and making the temperature gradient y (° C./cm) in the surface region of the Si—C solution 24 satisfy the following formula (1): y≧0.15789x+21.52632 (1) wherein x represents the Al content (at %) of the Si—C solution.

A low-resistance p-type SiC single crystal containing no inclusions is provided. This is achieved by a method for producing a SiC single crystal wherein a SiC seed crystal substrate 14 is contacted with a Si—C solution 24 having a temperature gradient in which the temperature falls from the interior toward the surface, to grow a SiC single crystal, and wherein the method comprises: using, as the Si—C solution, a Si—C solution containing Si, Cr and Al, wherein the Al content is 3 at % or greater based on the total of Si, Cr and Al, and making the temperature gradient y (° C./cm) in the surface region of the Si—C solution 24 satisfy the following formula (1): y≧0.15789x+21.52632 (1) wherein x represents the Al content (at %) of the Si—C solution.

A method and apparatus for manufacturing an SiC single crystal includes a graphite crucible for receiving an SiC solution with first and second induction heating coils wound around it. The first induction heating coil is located higher than the surface of the SiC solution. The second induction heating coil is located lower than the first induction heating coil. A power supply supplies a first alternating current to the first induction heating coil and supplies, to the second induction heating coil, a second alternating current having the same frequency as the first alternating current and flowing in the direction opposite to that of the first alternating current. The distance between the surface of the SiC solution and the position in the portion of the side wall of the crucible in contact with the SiC solution with the strength of a magnetic field at its maximum satisfies a predetermined equation.

Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.

A crystal growth apparatus includes a pressure-resistant vessel; a plurality of support tables arranged inside the pressure-resistant vessel; inner vessels each placed over the support tables, respectively; growth vessels contained the inner vessels, respectively; a heating means for heating the growth vessels; and a central rotating shaft connected to the support tables. The central rotating shaft is distant from central axes of the inner vessels, respectively. A seed crystal, a raw material of the Group 13 element and a flux are charged in each of the growth vessels, and the growth vessels are heated to form a melt and a nitrogen-containing gas is supplied to the melt to grow a crystal of a nitride of said Group 13 element while the central rotating shaft is rotated.

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al):
Si.sub.aM1.sub.bSc.sub.cAl.sub.d  (Formula 1) wherein a is more than 0.4 and less than 0.8, b is more than 0.2 and less than 0.6, c is more than 0.01 and less than 0.1, and d is more than 0.01 and less than 0.1.