A method of producing an apatite crystal includes the steps of preparing an apatite single crystal expressed by the general formula M.sup.2.sub.5(PO.sub.4).sub.3X (M.sup.2 being at least atomic element selected from the group consisting of divalent alkaline-earth metals and Eu, and X is at least one atomic selected from the group consisting of halogens); placing the apatite single crystal into a space controllable to a predetermined atmosphere; supplying water vapor into the space; and heating such that the atmosphere in the space is within a 1000 C. to 1400 C. range.

A method of producing an apatite crystal includes the steps of preparing an apatite single crystal expressed by the general formula M.sup.2.sub.5(PO.sub.4).sub.3X (M.sup.2 being at least atomic element selected from the group consisting of divalent alkaline-earth metals and Eu, and X is at least one atomic selected from the group consisting of halogens); placing the apatite single crystal into a space controllable to a predetermined atmosphere; supplying water vapor into the space; and heating such that the atmosphere in the space is within a 1000 C. to 1400 C. range.

A method of growing a cadmium zinc telluride (CdZnTe) crystal includes providing a crucible including a solid CdZnTe source and forming a Te-rich CdZnTe melt on the solid CdZnTe source. The method also includes positioning a CdZnTe seed crystal in physical contact with the Te-rich CdZnTe melt and growing the CdZnTe crystal from the Te-rich CdZnTe melt.

A method of growing a cadmium zinc telluride (CdZnTe) crystal includes providing a crucible including a solid CdZnTe source and forming a Te-rich CdZnTe melt on the solid CdZnTe source. The method also includes positioning a CdZnTe seed crystal in physical contact with the Te-rich CdZnTe melt and growing the CdZnTe crystal from the Te-rich CdZnTe melt.

Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (C.sub.si.sup.sol) defined by Equation (1) below is less than 0.37, wherein a SiC single crystal is formed by a solution method:
C.sub.si.sup.sol=AB+.sub.1.sub.2Equation (1)
in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, 1 is a constant of 5.422, and 2 is a constant of 9.097.

Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (C.sub.si.sup.sol) defined by Equation (1) below is less than 0.37, wherein a SiC single crystal is formed by a solution method:
C.sub.si.sup.sol=AB+.sub.1.sub.2Equation (1)
in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, 1 is a constant of 5.422, and 2 is a constant of 9.097.

The seed substrate comprises a base substrate and a base layer comprising a Group III nitride semiconductor formed on the base substrate, which has a high dislocation density region and a low dislocation density region. The planar pattern of the high dislocation density region is a honeycomb pattern. A hollow exists between the base substrate and the low dislocation density region. The object layer is grown through a flux method using the seed substrate. The high dislocation density region is melted back at an initial stage of crystal growth, and thereafter, the object layer is grown on the top surface of the low dislocation density region. A cavity remains between the high dislocation density region and the object layer. The presence of the cavity and the hollow makes easy to peel the object layer from the seed substrate.

The seed substrate comprises a base substrate and a base layer comprising a Group III nitride semiconductor formed on the base substrate, which has a high dislocation density region and a low dislocation density region. The planar pattern of the high dislocation density region is a honeycomb pattern. A hollow exists between the base substrate and the low dislocation density region. The object layer is grown through a flux method using the seed substrate. The high dislocation density region is melted back at an initial stage of crystal growth, and thereafter, the object layer is grown on the top surface of the low dislocation density region. A cavity remains between the high dislocation density region and the object layer. The presence of the cavity and the hollow makes easy to peel the object layer from the seed substrate.

The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70Csisol1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1):
Csisol=AB+12Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; 1 is 5.422 as a constant value, and 2 is 9.097 as a constant value.

The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70Csisol1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1):
Csisol=AB+12Equation (1) wherein, A is first energy (A) of a first evaluation lattice containing silicon atoms, carbon atoms, and metal atoms, in a silicon crystal lattice containing the metal and the carbon; B is second energy (B) of a second evaluation lattice containing silicon atoms and metal atoms, in a silicon crystal lattice containing the metal; 1 is 5.422 as a constant value, and 2 is 9.097 as a constant value.