A crystal growth apparatus includes a pressure-resistant vessel; a plurality of support tables arranged inside the pressure-resistant vessel; inner vessels each placed over the support tables, respectively; growth vessels contained the inner vessels, respectively; a heating means for heating the growth vessels; and a central rotating shaft connected to the support tables. The central rotating shaft is distant from central axes of the inner vessels, respectively. A seed crystal, a raw material of the Group 13 element and a flux are charged in each of the growth vessels, and the growth vessels are heated to form a melt and a nitrogen-containing gas is supplied to the melt to grow a crystal of a nitride of said Group 13 element while the central rotating shaft is rotated.

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe.sub.2. The method comprises: providing a PtTe.sub.2 polycrystalline material; placing the PtTe.sub.2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe.sub.2. The method comprises: providing a PtTe.sub.2 polycrystalline material; placing the PtTe.sub.2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

A production method according an embodiment of the present invention is to produce a SiC single crystal by a solution growth technique, and includes a formation step and a growth step. In the formation step, material of SiC solution contained in a crucible is melted, and a SiC solution is formed. In the growth step, a SiC seed crystal attached to a bottom end of a seed shaft is brought into contact with the SiC solution, and a SiC single crystal is grown on a crystal growth surface of the SiC seed crystal. In the growth step, while a temperature of the SiC solution is being raised, the SiC single crystal is grown. The SiC single crystal production method according to the embodiment facilitates production of a SiC single crystal of a desired polytype.

A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a SiC solution having a temperature gradient such that a temperature of the SiC solution decreases from an interior of the SiC solution toward a liquid level of the SiC solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the SiC solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

A method for producing a SiC single crystal, including flowing a high-frequency current at a first frequency to an induction heating coil disposed around a graphite crucible to heat raw material Si to a predetermined temperature, thereby while melting the raw material Si, dissolving out C from said graphite crucible to form a SiC solution, and after heating to the predetermined temperature, lowering the frequency from the first frequency to a second frequency to warm and hold the SiC solution.

A method for producing a SiC single crystal, including flowing a high-frequency current at a first frequency to an induction heating coil disposed around a graphite crucible to heat raw material Si to a predetermined temperature, thereby while melting the raw material Si, dissolving out C from said graphite crucible to form a SiC solution, and after heating to the predetermined temperature, lowering the frequency from the first frequency to a second frequency to warm and hold the SiC solution.

A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a Si-C solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.

An apparatus (10) for producing an SiC single crystal is used in the solution growth includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an SiC solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.

An apparatus (10) for producing an SiC single crystal is used in the solution growth includes a seed shaft (28) and a crucible (14). The seed shaft (28) has a lower end surface (28S) to which an SiC seed crystal (32) is to be attached. The crucible (14) holds an SiC solution (15). The seed shaft (28) includes a cylinder part (28A), a bottom part (28B), and a low heat conductive member (28C). The bottom part (28B) is located at the lower end of the cylinder part (28A) and has the lower end surface (28S). The low heat conductive member (28C) is arranged on the upper surface of the bottom part (28B) and has a thermal conductivity lower than that of the bottom part (28B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.