A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

Using processes disclosed herein, materials and structures are created and used. For example, processes can include melting amorphous carbon doped with nitrogen and carbon-13 into an undercooled state followed by quenching. Materials disclosed herein may include dopants in concentrations exceeding thermodynamic solubility limits.

A method of fabricating at least one single-crystal alloy semiconductor structure, comprising: forming at least one seed on a substrate for growth of at least one single-crystal alloy semiconductor structure, the at least one seed containing an alloying material; providing at least one structural form on the substrate which is crystallized to form the at least one single-crystal alloy semiconductor structure, the at least one structural form being formed of a host material and comprising a main body which extends from the at least one seed and a plurality of elements which are connected in spaced relation to the main body; heating the at least one structural form such that the material of the at least one structural form has a liquid state; and cooling the at least one structural form, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in the main body of the respective structural form away from the respective seed; wherein the plurality of elements of each structural form provide reservoirs of the alloying material in liquid state, such that successive ones of the plurality of elements act to maintain, in liquid state, an available supply of the alloying material to the growth front of the single crystal in the main body of the respective structural form.

A method of fabricating at least one single-crystal alloy semiconductor structure, comprising: forming at least one seed on a substrate for growth of at least one single-crystal alloy semiconductor structure, the at least one seed containing an alloying material; providing at least one structural form on the substrate which is crystallized to form the at least one single-crystal alloy semiconductor structure, the at least one structural form being formed of a host material and comprising a main body which extends from the at least one seed and a plurality of elements which are connected in spaced relation to the main body; heating the at least one structural form such that the material of the at least one structural form has a liquid state; and cooling the at least one structural form, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in the main body of the respective structural form away from the respective seed; wherein the plurality of elements of each structural form provide reservoirs of the alloying material in liquid state, such that successive ones of the plurality of elements act to maintain, in liquid state, an available supply of the alloying material to the growth front of the single crystal in the main body of the respective structural form.

A single crystal production apparatus (and a single crystal production method) is configured to produce a single crystal by approaching a raw material M gripped by a raw material grip portion, and a seed crystal S gripped by a seed crystal grip portion by disposing the raw material grip portion and the seed crystal grip portion mutually in a vertical direction and approaching both of them each other, and forming a melting zone M1 by making a portion melted by heating the raw material M by a heating part in contact with the seed crystal S, and cooling the melting zone, wherein the heating part has an infrared generating part, and the seed crystal grip portion is disposed at a vertically top position, and the raw material grip portion is disposed at a vertically bottom position.

Disclosed is a method for repairing a sealing segments, formed at least partially in a monocrystalline fashion, of a flow channel wall of a turbomachine. At first a repair region of the sealing segment is established, independently of defects which may be present, and subsequently a part of a base material of the sealing segment is removed in the repair region. Subsequently a repair coating is deposited epitaxially in the repair region.