Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.

Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.

An embodiment of the present invention provides a heat shield device for low oxygen single crystal growth of a single crystal ingot growth device, including: a crucible containing a silicon melt; a graphite crucible surrounding the crucible; a heat shield made of a low-emissivity (emissivity<0.3) material that surrounds a central lower portion of the graphite crucible and is spaced apart from the graphite crucible by a predetermined distance; and a connection part connecting the heat shield and the graphite crucible. Through the heat shield device according to the first embodiment of the present invention and the heat shield coating according to the second embodiment of the present invention, the concentration of oxygen flowing into the crystal may be reduced by lowering the temperature of the bottom of the crucible during the crystal growth, and the yield may be improved by reducing the BMD concentration in the semiconductor device through the growth of high-quality and low-oxygen single crystal.

An embodiment of the present invention provides a heat shield device for low oxygen single crystal growth of a single crystal ingot growth device, including: a crucible containing a silicon melt; a graphite crucible surrounding the crucible; a heat shield made of a low-emissivity (emissivity<0.3) material that surrounds a central lower portion of the graphite crucible and is spaced apart from the graphite crucible by a predetermined distance; and a connection part connecting the heat shield and the graphite crucible. Through the heat shield device according to the first embodiment of the present invention and the heat shield coating according to the second embodiment of the present invention, the concentration of oxygen flowing into the crystal may be reduced by lowering the temperature of the bottom of the crucible during the crystal growth, and the yield may be improved by reducing the BMD concentration in the semiconductor device through the growth of high-quality and low-oxygen single crystal.

Crystal pulling system having a housing and a crucible assembly are disclosed. The system includes a heat shield that defines a central passage through which an ingot passes during ingot growth. A cover member is moveable within the heat shield along a pull axis. The cover member may include an insulation layer. The cover member covers at least a portion of the charge during meltdown.

Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

Disclosed is an ingot growing apparatus. An ingot growing apparatus according to an embodiment of the present invention includes a growth furnace in which a main crucible is disposed, wherein the main crucible accommodates molten silicon and is rotated clockwise or counterclockwise to rotate the molten silicon clockwise or counterclockwise in order to grow an ingot, a susceptor formed to surround an outer surface of the main crucible and rotated in the same direction as the main crucible, and a preliminary melting unit which receives a solid silicon material, melts the solid silicon material into molten silicon, and supplies the molten silicon to the main crucible, wherein the preliminary melting unit includes a preliminary crucible which accommodates the molten silicon, and the preliminary crucible supplies the molten silicon contained in the preliminary crucible to the main crucible in a direction in which the molten silicon contained in the main crucible rotates.

The present invention relates to a continuous ingot growing apparatus, and more specifically, to a continuous ingot growing apparatus which melts a solid silicon material supplied to a preliminary crucible to supply the solid silicon material to a main crucible and which can adjust a supply amount of molten silicon while blocking floating matter floating on top of the molten silicon so as not to be supplied.

The present invention relates to a continuous ingot growing apparatus, and more specifically, to a continuous ingot growing apparatus which melts a solid silicon material supplied to a preliminary crucible to supply the solid silicon material to a main crucible and which can adjust a supply amount of molten silicon while blocking floating matter floating on top of the molten silicon so as not to be supplied.

A method of growing the ingot, including following steps: S1, providing an initial charge into a crucible; S2, heating the crucible to melt the initial charge, and after a set time, rotating the crucible at a rotation speed within a set speed range; S3, after a melting process of the charge is completed, descending a feed device to the position above the melt level in the crucible and a distance between feed device and the melt level being h, the feed device including a feed tube, and the feed tube adding a charge into a feed zone of the crucible; and S4, feeding in the feed zone, and growing an ingot in a growth zone. In Sl, the initial charge is respectively loaded into a first chamber, a second chamber and a third chamber,