Electrically conducting bulk -Ga.sub.2O.sub.3 single crystals can be produced by the Czochralski (CZ) method to have a pre-defined cylindrical diameter and a pre-defined cylindrical length. The method uses a growth furnace having a noble metal crucible with a Ga.sub.2O.sub.3 starting material. An inner thermal insulation is provided in the growth furnace with a radiative reflectivity lower than 0.4 in a near infrared spectral region of 1-3 m to decrease reflections of heat back to the growing single crystal, and thus, to increase the heat dissipation from the growing single crystal. Also, in the CZ method, when puling a single crystal from seeding to separation, a dynamic decrease of the growth rate is achieved from the initial growth rate of 1-10 mm/h, to a final growth rate of 0.2-1 mm/h, to dynamically decrease the latent heat of crystallization as the growth proceeds.

Electrically conducting bulk -Ga.sub.2O.sub.3 single crystals can be produced by the Czochralski (CZ) method to have a pre-defined cylindrical diameter and a pre-defined cylindrical length. The method uses a growth furnace having a noble metal crucible with a Ga.sub.2O.sub.3 starting material. An inner thermal insulation is provided in the growth furnace with a radiative reflectivity lower than 0.4 in a near infrared spectral region of 1-3 m to decrease reflections of heat back to the growing single crystal, and thus, to increase the heat dissipation from the growing single crystal. Also, in the CZ method, when puling a single crystal from seeding to separation, a dynamic decrease of the growth rate is achieved from the initial growth rate of 1-10 mm/h, to a final growth rate of 0.2-1 mm/h, to dynamically decrease the latent heat of crystallization as the growth proceeds.

A crystal-growth controlling method and device, and a crystal growing apparatus, used for, in the process of growing a crystal by a pulling method, forming the crystal of the shape required by the cell side. The method includes: in a process of growing a crystal by the pulling method, acquiring a growth image of the crystal in real time, and extracting shape information of the crystal at a growth interface from the growth image, wherein the growth interface is where the crystal intersects with a raw-material melt liquid level; comparing the shape information of the crystal at the growth interface with shape information of the predetermined shape, to obtain a comparison result; and based on the comparison result, adjusting a shape of the crystal at the growth interface by using a laser.

A crystal-growth controlling method and device, and a crystal growing apparatus, used for, in the process of growing a crystal by a pulling method, forming the crystal of the shape required by the cell side. The method includes: in a process of growing a crystal by the pulling method, acquiring a growth image of the crystal in real time, and extracting shape information of the crystal at a growth interface from the growth image, wherein the growth interface is where the crystal intersects with a raw-material melt liquid level; comparing the shape information of the crystal at the growth interface with shape information of the predetermined shape, to obtain a comparison result; and based on the comparison result, adjusting a shape of the crystal at the growth interface by using a laser.