A cold crucible having application in the field of making monocrystalline materials at high temperature. The cold crucible includes: a cold cage having sectors made of a good electrical conductor material and in which a charge is molten, and a cooling device with a heat-transfer fluid, configured so as to cool down, from inside, each segment of the cold cage. At least one sector of the cold crucible includes a housing and is removable, the housing being proper and intended to accommodate at least one so-called functionalising device of the cold crucible. Henceforth, it is possible to functionalise each sector independently of the others, by accommodating therein, a functionalising device configured, inter alia, so as to modify and/or analyse at least one property of the charge, in particular the molten charge, in the cold cage.

A semiconductor wafer including a single crystal doped with a dopant, wherein a resistivity of the wafer is 0.7 mΩ-cm or less, and wherein a striation height of the wafer is 6 mm or more. The resistivity of the wafer may be 0.8 mΩ-cm or less, and the striation height may be 13 mm or more. The resistivity of the wafer may be 0.7 mΩ-cm or less, and the striation may be 22 mm or more. Example features relate to a method of making a semiconductor wafer that includes adding a dopant to a silicon melt, rotationally pulling a crystal from the silicon melt, and applying a magnetic field of 3000 G or more such that the semiconductor wafer has a resistivity that is equal to or less than 0.8 mΩ-cm and a striation height that is equal to or more than 13 mm.

A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A method for producing a silicon ingot includes withdrawing a seed crystal from a melt that includes melted silicon in a crucible that is enclosed in a vacuum chamber containing a cusped magnetic field. At least one process parameter is regulated in at least two stages, including a first stage corresponding to formation of the silicon ingot up to an intermediate ingot length, and a second stage corresponding to formation of the silicon ingot from the intermediate ingot length to the total ingot length. During the second stage process parameter regulation may include reducing a crystal rotation rate, reducing a crucible rotation rate, and/or increasing a magnetic field strength relative to the first stage.

The present invention relates to an apparatus for growing a single crystal ingot capable of uniformly controlling an oxygen concentration in a longitudinal direction and a radial direction of a single crystal ingot by uniformly maintaining a convection pattern on a silicon melt interface, and a method for growing the same. In an apparatus for growing a single crystal ingot and a method for growing the same according to the present invention, a horizontal magnet is positioned to be movable up and down by a magnet moving unit around a crucible, so that a maximum gauss position (MGP) is positioned to be higher than the silicon melt interface and simultaneously, a rate of increase in the MGP is controlled to 3.5 mm/hr to 6.5 mm/hr, and thus it possible to secure simplicity and symmetry of convection on the silicon melt interface. Accordingly, in the present invention, it is possible to reduce an Oi deviation and a BMD deviation in a longitudinal direction and a radial direction of a single crystal ingot, thereby improving quality.

A convection pattern control method includes: heating a silicon melt in a quartz crucible using a heating portion; and applying a horizontal magnetic field to the silicon melt in the quartz crucible being rotated. In the heating of the silicon, the silicon melt is heated with the heating portion whose heating capacity differs on both sides across an imaginary line passing through a center axis of the quartz crucible and being in parallel to a central magnetic field line of the horizontal magnetic field when the quartz crucible is viewed from vertically above. In the applying of the horizontal magnetic field, the horizontal magnetic field of 0.2 tesla or more is applied to fix a direction of a convection flow in a single direction in a plane orthogonal to an application direction of the horizontal magnetic field in the silicon melt.

A method for producing an n-type monocrystalline silicon that includes pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon. The monocrystalline silicon exhibits an electrical resistivity ranging from 1.7 mΩcm to 2.0 mΩcm, and is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.0-fold relative to a straight-body diameter of the monocrystalline silicon.

A method for preparing a single crystal silicon ingot and a wafer sliced therefrom are provided. The ingots and wafers comprise nitrogen at a concentration of at least about 1×10.sup.14 atoms/cm.sup.3 and/or germanium at a concentration of at least about 1×10.sup.19 atoms/cm.sup.3, interstitial oxygen at a concentration of less than about 6 ppma, and a resistivity of at least about 1000 ohm cm.