A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.

A magnet coil for magnetic Czochralski single crystal growth includes: a first coil a second coil, and an auxiliary coil arranged between the first coil and the second coil. A distance between the first coil and a first edge of the auxiliary coil close to the first coil is equal to a distance between the second coil and a second edge of the auxiliary coil close to the second coil. The auxiliary coil, the first coil and the second coil have a common. When being energized, a direction of a current in the first coil is opposite to a direction of a current in the second coil, and a magnetic field generated by a current in the auxiliary coil is used for enhancing the a cusp magnetic field between the first coil and the second coil.

A method of manufacturing monocrystalline silicon by flowing inert gas in a chamber, applying horizontal magnetic field to a silicon melt in a quartz crucible, and pulling up monocrystalline silicon includes: forming a flow distribution of a flow of the inert gas flowing between a lower end of a heat shield and a surface of the silicon melt in the quartz crucible to be plane asymmetric with respect to a plane defined by a crystal pull-up axis of the pull-up device and an application direction of the horizontal magnetic field and rotationally asymmetric with respect to the crystal pull-up axis: maintaining the formed plane asymmetric and rotationally asymmetric flow distribution in a magnetic-field-free state until a silicon material in the quartz crucible is completely melted; and applying the horizontal magnetic field to the completely melted silicon material and starting pulling up the monocrystalline silicon.

A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.

A method of controlling a convection pattern of a silicon melt includes: acquiring a temperature at a first measurement point not overlapping a rotation center of a quartz crucible on a surface of the silicon melt, the quartz crucible rotating in a magnetic-field-free state; determining that the temperature at the first measurement point periodically changes; and fixing a direction of a convection flow to a single direction in a plane orthogonal with an application direction of a horizontal magnetic field in the silicon melt by starting a drive of a magnetic-field applying portion to apply the horizontal magnetic field to the silicon melt when a temperature change at the first measurement point reaches a predetermined state, and subsequently raising the intensity to 0.2 tesla or more.

The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a reflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the reflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein grooves are provided at the bottom of the inner wall of the reflector, so that the distance between the bottom of the reflector and the silicon crystal ingot in the direction of the magnetic field is greater than that in the direction perpendicular to the magnetic field. According to the semiconductor crystal growth device of the present invention, the quality of semiconductor crystal growth is improved.

The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a reflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the reflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein the bottom of the reflector is provided with downwardly convex steps, so that a distance between the bottom of the reflector and the silicon melt surface in the direction of the magnetic field is smaller than a distance between the bottom of the reflector and the silicon melt surface in the direction perpendicular to the magnetic field. According to the semiconductor crystal growth device of the present invention, the quality of semiconductor crystal growth is improved.

Provided a single crystal manufacturing method, a magnetic field generator, and a single crystal manufacturing apparatus, which allow the in-plane distribution of oxygen concentration in a single crystal to be uniform. A single crystal manufacturing method includes pulling-up a single crystal while applying a lateral magnetic field to a melt in a crucible. During a crystal pull-up process, the crucible is raised to meet the decrease in the melt, and a magnetic field distribution is controlled to meet the decrease in the melt in such a manner that the direction of the magnetic field at the melt surface and the direction of the magnetic field at the inner surface of a curved bottom portion of the crucible are constant from the beginning to the end of a body section growing step.