An apparatus for manufacturing compound single crystal includes a crystal growth section to hold a seed crystal, a gas supply section to supply a metal-contained gas and a reactant gas toward the seed crystal, and a heating section to heat the seed crystal and a metal source. The gas supply section includes a crucible holding the metal source, a carrier gas supply unit, and a reactant gas supply unit. A porous baffle plate is provided in an opening of the crucible. The porous baffle plate satisfies a relationship of 80%≤(1−V.sub.H/V.sub.B)×100<100% and a relationship of 0.0003<a.sup.2/L<1.1. V.sub.B is an apparent volume of the porous baffle plate, V.sub.H is a total volume of the through-holes contained in the porous baffle plate, “a” is a diameter of the through-hole, and L is a length of the through-hole.

A silicon carbide single crystal is grown by a method comprising: a single crystal growth step of growing a silicon carbide single crystal so as to not close a gap between a side surface of the silicon carbide single crystal growing on a silicon carbide seed crystal, and an inner-side surface of a guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by temperature lowering; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin−Pout, between partial pressure Pin of Si.sub.2C in a source gas in the vicinity of an inlet of the gap and partial pressure Pout of Si.sub.2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.

A silicon carbide crystal growing apparatus includes a physical vapor transport unit and an atomic layer deposition unit. The physical vapor transport unit has a crystal growing furnace configured to grow a silicon carbide crystal in an internal space of the crystal growing furnace. The atomic layer deposition unit is coupled to the crystal growing furnace and configured to perform an atomic doping operation on the silicon carbide crystal. A silicon carbide crystal growing method is also provided.

A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

Silicon carbide (SiC) wafers, SiC boules, and related methods are disclosed that provide improved dislocation distributions. SiC boules are provided that demonstrate reduced dislocation densities and improved dislocation uniformity across longer boule lengths. Corresponding SiC wafers include reduced total dislocation density (TDD) values and improved TDD radial uniformity. Growth conditions for SiC crystalline materials include providing source materials in oversaturated quantities where amounts of the source materials present during growth are significantly higher than what would typically be required. Such SiC crystalline materials and related methods are suitable for providing large diameter SiC boules and corresponding SiC wafers with improved crystalline quality.

Methods and devices for low-temperature deposition of phosphorous-doped silicon layers. Disilane is used as a silicon precursor, and nitrogen or a noble gas is used as a carrier gas. Phosphine is a suitable phosphorous precursor.

According to an embodiment, provided is a vapor phase growth apparatus including: a reactor; a first gas chamber provided above the reactor, a first process gas being introduced into the first gas chamber; and a plurality of first gas flow paths supplying the first process gas from the first gas chamber to the reactor, in which at least one of the plurality of gas flow paths has a first region and a second region located between the first region and the reactor, the first region has a first opening cross-sectional area in a plane perpendicular to a direction of a flow of the first process gas and a first length in the direction, the second region has a second opening cross-sectional area in the plane perpendicular to the direction and a second length in the direction, the first opening cross-sectional area is smaller than the second opening cross-sectional area, and the first length is equal to or less than the second length.

The present invention provides a single crystal growth method capable of suppressing the recrystallization of the raw material gas subjected to sublimation on the surface of the raw material, and suppressing the generation of different polytypes in the crystal growing single crystal. The single crystal growth method is carried out in a crucible comprising an inner bottom for providing a raw material and a crystal mounting part facing the inner bottom. The method comprises in the following order: providing the raw material in the inner bottom; covering at least a part of a surface of the raw material with a metal carbide powder in a plan view from the crystal mounting part; and growing a single crystal disposed in the crystal mounting part by sublimating the raw material by heating.

A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.