The present invention relates to a method for producing a preferably elongated SiC solid, in particular of polytype 3C. The method according to the invention preferably includes at least the following steps: introducing at least a first source gas into a process chamber, said first source gas including Si, introducing at least one second source gas into the process chamber, the second source gas including C, electrically energizing at least one separator element disposed in the process chamber to heat the separator element, setting a deposition rate of more than 200 ?m/h, wherein a pressure in the process chamber of more than 1 bar is generated by the introduction of the first source gas and/or the second source gas, and wherein the surface of the deposition element is heated to a temperature in the range between 1300? C. and 1800? C.

A shielding member, wherein the shielding member is formed of at least one of structure which has a non-flat plate shape having an inclined surface, and the inclined surface is located on a side of a substrate support part when the shielding member is disposed in a single crystal growth device, wherein the single crystal growth device comprising: a crystal growth container; a source storage part that is positioned at a lower inner part of the crystal growth container; the substrate support part, wherein the support part is disposed above the source storage part and supports a substrate to make the substrate face the source storage part; and a heating device that is disposed on an outer circumference of the crystal growth container, wherein the shielding member is disposed between the source storage part and the substrate support part, and wherein a single crystal of a source is grown on the substrate by sublimating the source from the source storage part.

A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

An apparatus for manufacturing compound single crystal includes a crystal growth section to hold a seed crystal, a gas supply section to supply a metal-contained gas and a reactant gas toward the seed crystal, and a heating section to heat the seed crystal and a metal source. The gas supply section includes a crucible holding the metal source, a carrier gas supply unit, and a reactant gas supply unit. A porous baffle plate is provided in an opening of the crucible. The porous baffle plate satisfies a relationship of 80%(1V.sub.H/V.sub.B)100<100% and a relationship of 0.0003<a.sup.2/L<1.1. V.sub.B is an apparent volume of the porous baffle plate, V.sub.H is a total volume of the through-holes contained in the porous baffle plate, a is a diameter of the through-hole, and L is a length of the through-hole.

A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

A silicon carbide single crystal is grown by a method comprising: a single crystal growth step of growing a silicon carbide single crystal so as to not close a gap between a side surface of the silicon carbide single crystal growing on a silicon carbide seed crystal, and an inner-side surface of a guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by temperature lowering; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, PinPout, between partial pressure Pin of Si.sub.2C in a source gas in the vicinity of an inlet of the gap and partial pressure Pout of Si.sub.2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.

In embodiments, an optoelectronic device comprises a substrate formed of magnesium oxide, and a multi-region stack epitaxially deposited upon the substrate. The multi-region stack may comprise a non-polar crystalline material structure along a growth direction, or may comprise a crystal polarity having an oxygen-polar crystal structure or a metal-polar crystal structure along the growth direction. In some cases, at least one region of the multi-region stack is a bulk semiconductor material comprising Mg.sub.(x)Zn.sub.(1-x)O. In some cases, at least one region of the multi-region stack is a superlattice comprising MgO and Mg.sub.(x)Zn.sub.(1-x)O.

Methods and systems for material deposition system equipment maintenance include evacuating a growth chamber of a material deposition system. The system comprises a growth chamber configured for a vacuum environment. A fluid circulation panel is inside the growth chamber, spaced apart from an inner surface of the growth chamber and comprising walls around an interior of the fluid circulation panel. A first port is in communication with the interior of the fluid circulation panel. A gas heater is coupled to the first port to heat and supply a heated gas into the interior of the fluid circulation panel to heat the walls of the fluid circulation panel. Methods include heating the gas with the gas heater and supplying the gas into the interior of the fluid circulation panel. The fluid circulation panel is heated, using the gas supplied to the interior of the fluid circulation panel.

A method is disclosed of growing an epitaxial layer on a substrate (20) of monocrystalline Silicon Carbide, SiC. The method comprises providing (S100) a source material (10) of monolithic polycrystalline SiC with a columnar micro-grain structure and the substrate (20) of monocrystalline SiC, in a chamber (5) of a crucible with a distance therein between, arranging (S102) a carbon getter (1) in said chamber (5) of the crucible close to the source material (10) and the substrate (20), said carbon getter (1) having a melting point higher than 2200? C. and an ability of forming a carbide layer with carbon species evaporated from SiC, reducing (S106) pressure in the chamber (5), inserting (S108) an inert gas into the chamber (5), raising (S110) the temperature in the chamber (5) to a growth temperature, such that a growth rate between 1 ?m/h and 1 mm/h, is achieved, and keeping (S112) the growth temperature until a growth of at least 5 ?m has been accomplished on the substrate (20).

A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.