A method for formation of a transition metal dichalcogenide (TMDC) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool is provided. The method includes evaporating metal from a solid metal source, forming a chalcogen-including gas-plasma, and introducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming a TMDC material layer on the substrate.

A silicon carbide single crystal manufacturing device comprises a furnace, a crucible disposed in the furnace, and a seed crystal holder capable of mounting seed crystals. The seed crystal holder is disposed at an upper portion of the crucible, and the seed crystal holder is capable of rotating and lifting up and down. Inside the furnace is further disposed with a furnace heater capable of heating the furnace to form an ambient first temperature gradient in the furnace. A heater-cooler device capable of acting on silicon carbide single crystals is disposed outside the seed crystal holder. The silicon carbide single crystal manufacturing device is capable of growing silicon carbide single crystals at a high speed while ensuring the high quality of the silicon carbide single crystals, thereby realizing large-diameter growth of the silicon carbide single crystals and reducing the loss in post-machining process.

A vapor phase growth apparatus includes a reactor, a plurality of flow paths, a cap, and an attachment. The reactor has an inlet through which vapor phase growth gas is introduced therein. The plurality of flow paths extend from the inlet to the outside of the inlet 8a. The cap has an introduction passage. The attachment has a branch path connectable to the introduction passage, and is attached to the cap. The branch path is branches in a tournament-tree shape from the introduction passage side toward the downstream side of the material gas, so that the branched paths are connected to the corresponding flow paths. Thus, a vapor phase growth apparatus capable of improving uniformity of the film thickness of an epitaxial layer grown on a substrate with high cost effectiveness, is provided.

An effusion cell includes a crucible for containing material to be evaporated or sublimated, a delivery tube configured to deliver evaporated or sublimated material originating from the crucible into a chamber, a supply tube extending from the crucible, the supply tube located and configured to trap condensate originating from the evaporated or sublimated material and to deliver the condensate back to the crucible, and at least one heating element located and configured to heat material in the crucible so as to cause evaporation or sublimation of the material and flow of the evaporated or sublimated material through the delivery tube and out from the effusion cell. The effusion cell is configured such that the crucible can be filled with the material to be evaporated or sublimated without removing the effusion cell from the process vacuum chamber. Semiconductor substrate processing systems may include such effusion cells.

The embodiments of the present disclosure disclose a method and an apparatus for crystal growth. The method for crystal growth may include: placing a seed crystal and a target source material in a growth chamber of an apparatus for crystal growth; executing a growth of a crystal based on the seed crystal and the target source material according to physical vapor transport; determining whether a preset condition is satisfied during the crystal growth process; and in response to determining that the preset condition is satisfied, replacing a sublimated target source material with a candidate source material. In the present disclosure, by replacing the sublimated target source material with the candidate source material, a crystal with large-size and high-quality can be grown.

A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.

A physical vapor deposition system includes a deposition chamber; a wafer support structure disposed within the deposition chamber and configured to support at least one wafer thereon, and at least one effusion cell disposed at least partially outside the deposition chamber and coupled to a wall of the deposition chamber. The at least one effusion cell is configured to generate physical vapor by evaporation or sublimation of material within the at least one effusion cell, and to inject the physical vapor into the deposition chamber through an aperture in the wall of the deposition chamber. The at least one effusion cell is configured such that the at least one effusion cell can be filled with the material to be evaporated or sublimated without removing the at least one effusion cell from the deposition chamber and without interrupting a deposition process performed using the deposition system.

A silicon carbide crystal and a method for manufacturing the same are disclosed. The silicon carbide crystal includes a seed layer, a bulk layer, and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer, and the stress buffering structure are each formed with a dopant that cycles between high and low concentration. Therefore, the crystal defects can be significantly reduced.

A material deposition system comprises a growth chamber configured for a vacuum environment. A fluid circulation panel is inside the growth chamber, spaced apart from an inner surface of the growth chamber and comprising walls around an interior of the fluid circulation panel. An injector pipe is in the interior of the fluid circulation panel and may include a plurality of holes along a length of the injector pipe. A first port may be in communication with the interior of the fluid circulation panel, where the injector pipe is inserted through the first port. A gas heater is configured to supply a heated gas into the interior of the fluid circulation panel to heat the walls of the fluid circulation panel and thereby heat the inner surface of the growth chamber.

A group 13 element source, a flux comprising at least one of an alkali metal and an alkaline earth metal, and an additive being liquid at an ambient temperature are placed in a crystal growing vessel. The crystal growing vessel is heated and pressurized under a nitrogen atom-containing gas atmosphere to form a melt containing the group 13 element source, the flux and the additive. Evaporation of the additive is prevented until the flux is melted. The crystal of the nitride of the group 13 element is then grown in the melt.