A method of manufacturing silicon carbide seed crystal and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1):

D=(BPD1−BPD2)/BPD1≤25%  (1).

Disclosed is a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment. The SiC container may be heated in Si atmosphere to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space. The SiC container may be heated in a TaC container of a material including TaC supplemented with a source of Si to grow an epitaxial layer of single crystalline SiC on the underlying substrate housed in the internal space.

A manufacturing device of SiC semiconductor substrates includes a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment, and a high-temperature vacuum furnace (11) capable of heating the SiC container in Si atmosphere. The device can further be configured such that the SiC container is housed in Si atmosphere and an underlying substrate (40) is housed in the SiC container, and the high-temperature vacuum furnace is capable of heating with a temperature gradient.

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

A structure is provided and includes (i) a substrate having a surface, the surface comprising a ternary or quaternary oxide having a first lattice parameter, the first lattice parameter being a lattice parameter of the ternary or quaternary oxide as it is present at the surface; and (ii) a layer of a perovskite oxide on the ternary or quaternary oxide, the perovskite oxide having a second lattice parameter, the second lattice parameter being a native lattice parameter of the perovskite oxide, wherein the first lattice parameter is larger than the second lattice parameter. A method for forming a perovskite oxide with an a-axis orientation is also provided.

An object to be solved by the present invention is to provide a new technology for producing a SiC substrate in which strain is removed and capable of achieving a flat surface as flat as a surface that has been subjected to CMP. The present invention, which solves the above object, is a method for producing a SiC substrate, the method including an etching step of etching a SiC substrate having arithmetic average roughness (Ra) of a surface of equal to or less than 100 nm in an atmosphere containing Si element and C element.

The presently disclosed subject matter relates generally to GaAs.sub.1−xSb.sub.x nanowires (NW) grown on a graphitic substrate, to methods of growing such nanowires, and to use of such nanowires in applications such as flexible near infrared photodetector.

A silicon carbide single crystal manufacturing apparatus includes a crucible constituted by a crucible body and a crucible lid; and a base that is placed on the underside of the crucible lid and holds a silicon carbide seed crystal, wherein the base has a structure in which a plurality of graphite plates having anisotropy of the thermal expansion coefficient are laminated and bonded, and when viewed in a plan view from the lamination direction, in the plurality of graphite plates, the maximum directional axes of the thermal expansion coefficient between adjacent graphite plates are orthogonal to each other or the maximum directional axes intersect within an angle range of ±15° from orthogonal.

Described herein are rock salt substrates and methods of making thereof that are useful as epitaxial substrates for semiconducting materials, including ultra-wide bandgap materials. Advantageously, the described rock salt substrates may be useful as substrates for Group III (Al, Ga, In)—N substrate allowing for pseudomorphic growth of novel, desirable materials. The rock salt may be provided as a bulk material or deposited as a thin film. These substrates may allow for generation of high Al content semiconductor devices with ultra-wide bandgap and other useful properties.

According to one embodiment, a method for manufacturing a silicon carbide base body is disclosed. The method can include preparing a first base body including silicon carbide. The first base body includes a first base body surface tilted with respect to a (0001) plane of the first base body. A first line segment where the first base body surface and the (0001) plane of the first base body intersect is along a [11-20] direction of the first base body. The method can include forming a first layer at the first base body surface. The first layer includes silicon carbide. The method can include removing a portion of the first layer. The first-layer surface is tilted with respect to a (0001) plane of the first layer. A second line segment where the first-layer surface and the (0001) plane of the first layer intersect is along a [−1100] direction.