An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter semiconductor substrate.

The present invention is a method for manufacturing a semiconductor substrate including a crystal growth step S30 of forming a growth layer 20 on an underlying substrate 10 having through holes 11. In addition, the present invention is a method for forming a growth layer 20 including the through hole formation step S10 of forming through holes 11 in the underlying substrate 10 before forming the growth layer 20 on a surface of the underlying substrate 10.

The problem to addressed by the present invention is that of providing a novel technique that can remove a strained layer introduced into a silicon carbide substrate by laser processing. The present silicon carbide substrate manufacturing method involves a processing step for performing laser processing to remove part of a silicon carbide substrate by irradiating the silicon carbide substrate with a laser, and a strained layer removal step for removing a strained layer that was introduced in the silicon carbide substrate by the aforementioned processing step involving heat treatment of the silicon carbide substrate. In this way, the present invention, which is a method of removing a strained layer introduced into a silicon carbide substrate by laser processing, involves a strained layer removal step for heat treating the silicon carbide substrate.

A silicon carbide ingot having micropipes in a seed crystal closed and being reduced in the gathering of screw dislocations, a method for manufacturing the silicon carbide ingot, and a method for manufacturing a silicon carbide wafer are provided. The silicon carbide ingot comprises: a seed crystal composed of a silicon carbide single crystal and having micropipes being hollow defects; a buffer layer provided on the seed crystal and composed of silicon carbide; and a bulk crystal growth layer provided on the buffer layer and composed of silicon carbide. The buffer layer and the bulk crystal growth layer have a plurality of screw dislocations continuous with the micropipes closed with the buffer layer, and the plurality of screw dislocations having the micropipe in common in the bulk crystal growth layer are 150 μm or more apart from each other.

The present disclosure relates to a method that includes depositing a first layer onto a substrate, depositing a second layer onto a surface of the first layer, and separating the substrate from the second layer, where the substrate includes a first III-V alloy, the second layer includes second III-V alloy, and the first layer includes a material that includes at least two of a Group 1A element, a Group 2A element, a Group 6A element, and/or a halogen.

A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

A method of growing a conductive Ga.sub.2O.sub.3-based crystal film by MBE includes producing a Ga vapor and a Si-containing vapor and supplying the vapors as molecular beams onto a surface of a Ga.sub.2O.sub.3-based crystal substrate so as to grow the Ga.sub.2O.sub.3-based crystal film. The Ga.sub.2O.sub.3-based crystal film includes a Si-containing Ga.sub.2O.sub.3-based single crystal film. The Si-containing vapor is produced by heating Si or a Si compound and Ga while allowing the Si or a Si compound to contact with the Ga.

The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100° C. to less than 2,300° C. is included.

A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

A method for forming a lithium niobate- or lithium tantalum-based (LN/LT) layer includes providing a silicon-based substrate, forming nucleation layer on the substrate, and forming the LN/LT layer by epitaxy on the nucleation layer. The nucleation layer is chosen based upon a III-N material. The nucleation layer may be used in a surface acoustic wave device.

A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.