The problem to be solved by the present invention is to provide novel technology capable of suppressing the introduction of displacement to a growth layer. The present invention, which solves the abovementioned problem, pertains to a method for manufacturing a semiconductor substrate, the method including: a processing step for removing a portion of a base substrate and forming a pattern that includes a minor angle; and a crystal growth step for forming a growth layer on the base substrate where the patter has been formed. In addition, the present invention pertains to a method for suppressing the introduction of displacement to a growth layer, the method including a processing step for removing a portion of the base substrate and forming a pattern that includes a minor angle prior to forming the growth layer on the base substrate.

The problem to be solved by the present invention is to provide novel technology capable of suppressing the introduction of displacement to a growth layer. The present invention, which solves the abovementioned problem, pertains to a method for manufacturing a semiconductor substrate, the method including: a processing step for removing a portion of a base substrate and forming a pattern that includes a minor angle; and a crystal growth step for forming a growth layer on the base substrate where the patter has been formed. In addition, the present invention pertains to a method for suppressing the introduction of displacement to a growth layer, the method including a processing step for removing a portion of the base substrate and forming a pattern that includes a minor angle prior to forming the growth layer on the base substrate.

A photocatalytic device includes a substrate and an array of conductive projections supported by the substrate and extending outward from the substrate. Each conductive projection of the array of conductive projections has a semiconductor composition configured for charge carrier generation in response to solar radiation. Each conductive projection of the array of conductive projections is decorated with a co-catalyst arrangement. The co-catalyst arrangement includes gold and an oxide material.

A photocatalytic device includes a substrate and an array of conductive projections supported by the substrate and extending outward from the substrate. Each conductive projection of the array of conductive projections has a semiconductor composition configured for charge carrier generation in response to solar radiation. Each conductive projection of the array of conductive projections is decorated with a co-catalyst arrangement. The co-catalyst arrangement includes gold and an oxide material.

A photocatalytic device includes a substrate and an array of conductive projections supported by the substrate and extending outward from the substrate. Each conductive projection of the array of conductive projections has a semiconductor composition configured for charge carrier generation in response to light radiation. Each conductive projection of the array of conductive projections is decorated with a catalyst arrangement, the catalyst arrangement including a parental Group IB metal and a secondary platinum group metal.

A photocatalytic device includes a substrate and an array of conductive projections supported by the substrate and extending outward from the substrate. Each conductive projection of the array of conductive projections has a semiconductor composition configured for charge carrier generation in response to light radiation. Each conductive projection of the array of conductive projections is decorated with a catalyst arrangement, the catalyst arrangement including a parental Group IB metal and a secondary platinum group metal.