According to the embodiment, a radiation detector includes a photoelectric conversion substrate converting light to an electrical signal and a scintillator layer being in contact with the photoelectric conversion substrate and converting externally incident radiation to light. The scintillator layer is made of a phosphor containing Tl as an activator in CsI, which is a halide. A concentration of the activator in the phosphor is 1.6 mass %0.4 mass %, and a concentration distribution of the activator in an in-plane direction and a film thickness direction is within 15%.

The present invention relates to an electrode having a multilayer nanomesh structure using single-crystalline copper and a method for manufacturing same, the electrode comprising: a substrate; a single-crystalline copper electrode layer formed on the substrate and having a hive-shaped pattern with a nano-sized line width; and a metal oxide layer formed on the single-crystalline copper electrode layer, this providing an electrode having excellent optical transmittance, low electrical sheet resistance, and excellent mechanical stability. The present invention is technically characterized by an electrode having a multilayer nanomesh structure using single-crystalline copper, the electrode comprising: a substrate; a single-crystalline copper electrode layer formed on the substrate and having a hive-shaped pattern with a nano-sized line width; and a metal oxide layer formed on the single-crystalline copper electrode layer.

The present invention relates to an electrode having a multilayer nanomesh structure using single-crystalline copper and a method for manufacturing same, the electrode comprising: a substrate; a single-crystalline copper electrode layer formed on the substrate and having a hive-shaped pattern with a nano-sized line width; and a metal oxide layer formed on the single-crystalline copper electrode layer, this providing an electrode having excellent optical transmittance, low electrical sheet resistance, and excellent mechanical stability. The present invention is technically characterized by an electrode having a multilayer nanomesh structure using single-crystalline copper, the electrode comprising: a substrate; a single-crystalline copper electrode layer formed on the substrate and having a hive-shaped pattern with a nano-sized line width; and a metal oxide layer formed on the single-crystalline copper electrode layer.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

Various embodiments may provide a low temperature (i.e., less than 850 C.) method of Silicon-Germanium (SiGe) on sapphire (Al.sub.2O.sub.3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850 C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850 C.) methods had surface temperatures within the range of 850 C.-900 C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450 C. to about 500 C.

Various embodiments may provide a low temperature (i.e., less than 850 C.) method of Silicon-Germanium (SiGe) on sapphire (Al.sub.2O.sub.3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850 C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850 C.) methods had surface temperatures within the range of 850 C.-900 C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450 C. to about 500 C.

To improve the single crystallinity of a stacked film in which a ZrO.sub.2 film and a Y.sub.2O.sub.3 film are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrO.sub.2 film and a Y.sub.2O.sub.3 film formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05 to 2.0.

To improve the single crystallinity of a stacked film in which a ZrO.sub.2 film and a Y.sub.2O.sub.3 film are stacked or a YSZ film. A crystal film includes a Zr film and a stacked film in which a ZrO.sub.2 film and a Y.sub.2O.sub.3 film formed on the Zr film are stacked, and has a peak half-value width when the stacked film is evaluated by X-ray diffraction being 0.05 to 2.0.

An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.