A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.

A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D.sub.1-xE.sub.x, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L1.sub.0 compound, the magnetic layer being in contact with the templating structure.

A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D.sub.1-xE.sub.x, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L1.sub.0 compound, the magnetic layer being in contact with the templating structure.

Disclosed herein is an apparatus for growing a single crystal metal-oxide epi wafer, including a reaction chamber having an internal space, a substrate mounting unit disposed in the internal space and allowing a substrate to be mounted thereon, a metal-oxide treating unit treating a metal-oxide to supply metal ions and oxygen ions generated from the metal-oxide to the substrate, and an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, wherein the metal-oxide treating unit includes a mount disposed to face the substrate in the internal space and allowing a zinc oxide plate which is the metal-oxide to be installed thereon, and an electron beam irradiator irradiating the zinc oxide plate with an electron beam in a direct manner to cause zinc ions and oxygen ions evaporated from the zinc oxide plate to move toward the substrate.

Disclosed herein is an apparatus for growing a single crystal metal-oxide epi wafer, including a reaction chamber having an internal space, a substrate mounting unit disposed in the internal space and allowing a substrate to be mounted thereon, a metal-oxide treating unit treating a metal-oxide to supply metal ions and oxygen ions generated from the metal-oxide to the substrate, and an arsenic supply unit installed to face the substrate and supplying arsenic ions to the substrate, wherein the metal-oxide treating unit includes a mount disposed to face the substrate in the internal space and allowing a zinc oxide plate which is the metal-oxide to be installed thereon, and an electron beam irradiator irradiating the zinc oxide plate with an electron beam in a direct manner to cause zinc ions and oxygen ions evaporated from the zinc oxide plate to move toward the substrate.

A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.

A solid ion conductive material can include a complex metal halide. The complex metal halide can include at least one alkali metal element. In an embodiment, the solid ion conductive material including the complex metal halide can be a single crystal. In another embodiment, the ion conductive material including the complex metal halide can be a crystalline material having a particular crystallographic orientation. A solid electrolyte can include the ion conductive material including the complex metal halide.