A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.

Disclosed herein is a suspension plasma spray process that comprises suspending metal oxide particles in a carrier fluid to produce a suspension. The suspension is ejected onto a substrate via a plasma flame. The particles are evaporated in the plasma flame to form a gaseous ceramic during their travel to the substrate. The gaseous ceramic is deposited on the substrate to form columnar grains.

Disclosed herein is a suspension plasma spray process that comprises suspending metal oxide particles in a carrier fluid to produce a suspension. The suspension is ejected onto a substrate via a plasma flame. The particles are evaporated in the plasma flame to form a gaseous ceramic during their travel to the substrate. The gaseous ceramic is deposited on the substrate to form columnar grains.

A method for fabricating a metastable crystalline structure is provided. The method includes providing a base substrate, wherein the base substrate comprises an insulating layer. The method further includes providing a metastable seed crystal on the base substrate, wherein the metastable seed crystal has a predefined metastable crystal phase or a predefined metastable composition. The method further includes forming a template structure above the base substrate, wherein the template structure covers at least a part of the metastable seed crystal. The method further includes growing the metastable crystalline structure with the predefined metastable crystal phase or the predefined metastable composition of the seed crystal inside the template structure. The growing of the metastable crystalline structure is nucleated from the seed crystal. Crystalline structures produced by the methods described herein are also provided.

A method for fabricating a metastable crystalline structure is provided. The method includes providing a base substrate, wherein the base substrate comprises an insulating layer. The method further includes providing a metastable seed crystal on the base substrate, wherein the metastable seed crystal has a predefined metastable crystal phase or a predefined metastable composition. The method further includes forming a template structure above the base substrate, wherein the template structure covers at least a part of the metastable seed crystal. The method further includes growing the metastable crystalline structure with the predefined metastable crystal phase or the predefined metastable composition of the seed crystal inside the template structure. The growing of the metastable crystalline structure is nucleated from the seed crystal. Crystalline structures produced by the methods described herein are also provided.

A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.

A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.