A method of removing semiconducting layers from a substrate, in particular, III-nitride-based semiconductor layers from a III-nitride-based substrate, with an attached film, using a peeling technique. The method comprises forming the semiconductor layers into island-like patterns on the substrate via an epitaxial lateral overgrowth method, with a horizontal trench extending inwards from the sides of the layers. Stress is induced in the layers by raising or lowering the temperature, and applying pressure to the attached film, such that the film firmly fits a shape of the layers. Differences in thermal expansion between the substrate and the film attached to the layers initiates a crack at an interface between the layers and the substrate, so that the layers can be removed from the substrate. Once the layers are removed, the substrate can be recycled, resulting in cost savings for device fabrication.

A patterned diamond and methods of making such patterned diamond are disclosed. The patterned diamond may include: a single crystal diamond or a polycrystal diamond; and a metallic pattern embedded in the single crystal diamond or the polycrystal diamond such that, the single crystal diamond or the polycrystal diamond encapsulates the metallic pattern from at least 4 sides. The disclosed method may include providing a first portion of a single crystal diamond or a polycrystal diamond; introducing a metallic pattern to at least one surface of the first portion of the single crystal or a first portion of the polycrystal diamond; and growing, using a CVD process or HTHP process, a second portion of the single crystal diamond or the second portion of the polycrystal diamond on the first portion, such that the single crystal diamond or the polycrystal diamond at least partially encapsulates the metallic pattern.

A patterned diamond and methods of making such patterned diamond are disclosed. The patterned diamond may include: a single crystal diamond or a polycrystal diamond; and a metallic pattern embedded in the single crystal diamond or the polycrystal diamond such that, the single crystal diamond or the polycrystal diamond encapsulates the metallic pattern from at least 4 sides. The disclosed method may include providing a first portion of a single crystal diamond or a polycrystal diamond; introducing a metallic pattern to at least one surface of the first portion of the single crystal or a first portion of the polycrystal diamond; and growing, using a CVD process or HTHP process, a second portion of the single crystal diamond or the second portion of the polycrystal diamond on the first portion, such that the single crystal diamond or the polycrystal diamond at least partially encapsulates the metallic pattern.

High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

Methods and devices for low-temperature deposition of phosphorous-doped silicon layers. Disilane is used as a silicon precursor, and nitrogen or a noble gas is used as a carrier gas. Phosphine is a suitable phosphorous precursor.

A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. A buffer layer is formed on the epitaxial growth surface. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are separated to form a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.

Light emitting devices having light extraction or guiding structures integrated in their epitaxial layers, wherein the light extraction and guiding structures are fabricated using a lateral epitaxial growth technique that transfers a pattern from a growth restrict mask and/or host substrate to the epitaxial layers.

Light emitting devices having light extraction or guiding structures integrated in their epitaxial layers, wherein the light extraction and guiding structures are fabricated using a lateral epitaxial growth technique that transfers a pattern from a growth restrict mask and/or host substrate to the epitaxial layers.