The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M.sub.1-.sub.vA.sub.v).sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where M represents at least one of Ti, V, Cr, Mn, Fe, and Co, A represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<v<1.0, 0.70y/(x+y)0.98, 0.45z0.55, 0<w0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M.sub.1-.sub.vA.sub.v).sub.xAl.sub.y(N.sub.1-wO.sub.w).sub.z (where M represents at least one of Ti, V, Cr, Mn, Fe, and Co, A represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<v<1.0, 0.70y/(x+y)0.98, 0.45z0.55, 0<w0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

To provide a method for growing a niobium oxynitride having small carrier density, the present invention is a method for growing a niobium oxynitride layer, the method comprising: (a) growing a first niobium oxynitride film on a crystalline titanium oxide substrate, while a temperature of the crystalline titanium oxide substrate is maintained at not less than 600 Celsius degrees and not more than 750 Celsius degrees; and (b) growing a second nitride oxynitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at not less than 350 Celsius degrees, after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.

To provide a method for growing a niobium oxynitride having small carrier density, the present invention is a method for growing a niobium oxynitride layer, the method comprising: (a) growing a first niobium oxynitride film on a crystalline titanium oxide substrate, while a temperature of the crystalline titanium oxide substrate is maintained at not less than 600 Celsius degrees and not more than 750 Celsius degrees; and (b) growing a second nitride oxynitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at not less than 350 Celsius degrees, after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.

A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminum film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminum film by a sputtering method under an atmosphere of Nitrogen and Argon.

A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminum film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminum film by a sputtering method under an atmosphere of Nitrogen and Argon.

The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50 or less.

The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50 or less.

An underlying substrate for a single crystal diamond laminate substrate includes an initial substrate being any of a single crystal Si {111} substrate and a single crystal -Al.sub.2O.sub.3 {0001} substrate, etc., an intermediate layer on the initial substrate, in which an outermost surface on the initial substrate has no off angle, or has an off angle in a crystal axis <1-12> direction relative to a cubic crystal plane orientation {111}, or has an off angle in a crystal axis <10-10> or <11-20> direction relative to a hexagonal crystal plane orientation {0001}, etc. Thereby, the underlying substrate is provided, in which the substrate is capable of forming a single crystal diamond layer having a large area (large diameter), high crystallinity, few hillocks, few abnormal growth particles, few dislocation defects, etc., high purity, low stress, and high quality, and applicable to an electronic and magnetic device.

An underlying substrate for a single crystal diamond laminate substrate includes an initial substrate being any of a single crystal Si {111} substrate and a single crystal -Al.sub.2O.sub.3 {0001} substrate, etc., an intermediate layer on the initial substrate, in which an outermost surface on the initial substrate has no off angle, or has an off angle in a crystal axis <1-12> direction relative to a cubic crystal plane orientation {111}, or has an off angle in a crystal axis <10-10> or <11-20> direction relative to a hexagonal crystal plane orientation {0001}, etc. Thereby, the underlying substrate is provided, in which the substrate is capable of forming a single crystal diamond layer having a large area (large diameter), high crystallinity, few hillocks, few abnormal growth particles, few dislocation defects, etc., high purity, low stress, and high quality, and applicable to an electronic and magnetic device.