A composite nitride-based film structure includes a bulk single crystal, a plurality of nitride microcrystals, and an amorphous nitride thin film. The plurality of nitride microcrystals is provided on the bulk single crystal, and has a specific orientation relationship with a crystal structure of the bulk single crystal. The nitride thin film is provided on the bulk single crystal, surrounds the nitride microcrystal, and covers a surface of the bulk single crystal.

A method of forming a single-crystal group-III nitride is provided in the present invention. In some embodiments, the method includes the following steps. First, a molybdenum disulfide (MoS.sub.2) is formed on a remote substrate. Then, the MoS.sub.2 is transferred onto a substrate. Next, a sputtering operation is performed to epitaxially grow a single-crystal group-III nitride layer on the MoS.sub.2, so as to form the single-crystal group-III nitride layer on the substrate such as a Si substrate or a flexible substrate.

A method of forming a single-crystal group-III nitride is provided in the present invention. In some embodiments, the method includes the following steps. First, a molybdenum disulfide (MoS.sub.2) is formed on a remote substrate. Then, the MoS.sub.2 is transferred onto a substrate. Next, a sputtering operation is performed to epitaxially grow a single-crystal group-III nitride layer on the MoS.sub.2, so as to form the single-crystal group-III nitride layer on the substrate such as a Si substrate or a flexible substrate.

A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing M.sub.xRu.sub.yN.sub.2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein M.sub.xRu.sub.yZ.sub.2 is cubic crystal system or amorphous

A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing M.sub.xRu.sub.yN.sub.2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein M.sub.xRu.sub.yZ.sub.2 is cubic crystal system or amorphous

A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.

A molecular beam epitaxy apparatus includes a radical generator for generating a radical species, a molecular beam cell for generating a molecular beam or an atomic beam, and a vacuum chamber for accommodating a substrate therein, in use, the substrate being irradiated with the radical species and the molecular beam or the atomic beam in vacuum, to thereby form, on the substrate, a crystal of a compound derived from the element of the radical species and the element of the molecular beam or the atomic beam.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.