The present invention provides an optimizing growth method for improving quality of MOCVD epitaxial thin films, including the following method: step 1, putting a substrate and a thin film A to a reaction chamber of an MOCVD equipment; and feeding a compound containing an element X as an X source under the condition that the reaction chamber is filled with H2; configuring a temperature, reaction chamber pressure and deposition time within a parameter range where the gaseous compound can decompose X atoms; pre-depositing an X atomic layer on a surface of the substrate or the thin film A; the X atomic layer is adsorbed on the substrate or thin film A at this time; and the X atomic layer can be reacted with other compounds to generate a thin film B component in the follow-up process, or can directly form a thin film B component with the thin film A.

An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal scaling grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal scaling grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

The present invention relates to a tantalum carbide coated carbon material, and more particularly, to a tantalum carbide coated carbon material including a tantalum carbide film having a surface contact angle of 50° or more and low surface energy.

An apparatus for manufacturing hexagonal crystals using HVPE includes: a reaction tube; a reaction boat disposed on one side in the reaction tube; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the reaction boat; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the reaction boat; and a heater for heating the reaction tube. The reaction boat includes a source part for receiving source materials; and a crystal growth part disposed beneath the source part and having a depressed growth mold of a predetermined shape. The source part includes: at least one penetration hole formed on a bottom surface; a first allocating area formed around the at least one penetration hole, for receiving aluminum; and a second allocating area formed around the first allocating area, for receiving a main material of the hexagonal crystal and gallium.

An apparatus for manufacturing hexagonal crystals using HVPE includes: a reaction tube; a reaction boat disposed on one side in the reaction tube; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the reaction boat; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the reaction boat; and a heater for heating the reaction tube. The reaction boat includes a source part for receiving source materials; and a crystal growth part disposed beneath the source part and having a depressed growth mold of a predetermined shape. The source part includes: at least one penetration hole formed on a bottom surface; a first allocating area formed around the at least one penetration hole, for receiving aluminum; and a second allocating area formed around the first allocating area, for receiving a main material of the hexagonal crystal and gallium.

Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

According to an aspect of the present disclosure, there is provided a liner of an epitaxial reactor, including a lower body including an entrance stepped portion which is disposed on an upper end of one side of an outer side surface of the lower body and through which a source gas is introduced, a plurality of lower partitions disposed apart from each other on the entrance stepped portion, an upper body disposed on the lower body to face the lower body and including an entrance cover part forming a flow path which is interposed between the entrance stepped portion and the entrance cover part and through which the source gas is introduced, and a plurality of upper partitions disposed apart from each other on the entrance cover part, wherein the upper partitions are more densely disposed in both side portions than in a central portion of the entrance cover part.

There is provided a method of manufacturing a crystal substrate, including: preparing a first crystal body which is a substrate comprising a single crystal of group III nitride produced by a vapor phase method and having a first main surface, and in which c-plane of the single crystal is curved in a concave spherical shape with a predetermined curvature; and growing a second crystal body comprising a single crystal of group III nitride on the first main surface, in a mixed melt containing an alkali metal and a group III element.

There is provided a method of manufacturing a crystal substrate, including: preparing a first crystal body which is a substrate comprising a single crystal of group III nitride produced by a vapor phase method and having a first main surface, and in which c-plane of the single crystal is curved in a concave spherical shape with a predetermined curvature; and growing a second crystal body comprising a single crystal of group III nitride on the first main surface, in a mixed melt containing an alkali metal and a group III element.