Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to he mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.

Provided is a manufacturing device capable of effectively and sufficiently reducing an edge crown. The wafer support is used in a chemical vapor phase growth device in which an epitaxial film is grown on a main surface of a wafer using a chemical vapor deposition method, the wafer support including: a wafer mounting surface having an upper surface on which a substrate is mounted; and a wafer support portion that rises to surround a wafer to he mounted, in which a height from an apex of the wafer support portion to a main surface of the wafer mounted on the wafer mounting surface is 1 mm or more.

Provided is a lift pin for an epitaxial growth apparatus, which can prevent the back surface of a silicon wafer from being damaged by the lift pin, reduce emission of dust due to the rubbing of the lift pin against the wall surface of a through hole in a susceptor, and prevent peeling of glassy carbon. The lift pin has a straight trunk part to be inserted through the through hole; a head part to be made to abut a silicon wafer; and a cover part covering at least a top of the head part. The straight trunk part and the head part are made of a porous body, the cover part is made of a carbon-based covering material, and at least part of voids of the porous body of the head part is filled with the cover part.

Provided is a lift pin for an epitaxial growth apparatus, which can prevent the back surface of a silicon wafer from being damaged by the lift pin, reduce emission of dust due to the rubbing of the lift pin against the wall surface of a through hole in a susceptor, and prevent peeling of glassy carbon. The lift pin has a straight trunk part to be inserted through the through hole; a head part to be made to abut a silicon wafer; and a cover part covering at least a top of the head part. The straight trunk part and the head part are made of a porous body, the cover part is made of a carbon-based covering material, and at least part of voids of the porous body of the head part is filled with the cover part.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

A vapor deposition device is provided that can make uniform a CVD film thickness at a circumferential edge of a wafer. A carrier is formed in an endless ring shape having a bottom surface that rests on a top surface of a susceptor, a top surface touching and supporting an outer edge of a reverse face of a wafer, an outer circumferential wall surface, and an inner circumferential wall surface, and the carrier is also configured with a structure or shape in a circumferential direction of the top surface that has a correspondence relationship to a crystal orientation in the circumferential direction of the wafer, and a before-treatment wafer is mounted on the carrier such that the crystal orientation in the circumferential direction of the before-treatment wafer and the structure or shape in the circumferential direction have a correspondence relationship.

A vapor deposition device is provided that can make uniform a CVD film thickness at a circumferential edge of a wafer. A carrier is formed in an endless ring shape having a bottom surface that rests on a top surface of a susceptor, a top surface touching and supporting an outer edge of a reverse face of a wafer, an outer circumferential wall surface, and an inner circumferential wall surface, and the carrier is also configured with a structure or shape in a circumferential direction of the top surface that has a correspondence relationship to a crystal orientation in the circumferential direction of the wafer, and a before-treatment wafer is mounted on the carrier such that the crystal orientation in the circumferential direction of the before-treatment wafer and the structure or shape in the circumferential direction have a correspondence relationship.

A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface.

A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface.