The present disclosure generally relates to a substrate support for processing of semiconductor substrates. In one example, the substrate support has a body. The body has a top surface configured to support a substrate thereon. The body has a bottom surface opposite the top surface. The body has an upper portion disposed at the top surface and a lower portion disposed at the bottom surface. An IR blocking material is encased by the upper portion and the lower portion, wherein the IR blocking material is an optically opaque at IR wavelengths and the lower portion is optically transparent at IR wavelengths.

The present disclosure generally relates to a substrate support for processing of semiconductor substrates. In one example, the substrate support has a body. The body has a top surface configured to support a substrate thereon. The body has a bottom surface opposite the top surface. The body has an upper portion disposed at the top surface and a lower portion disposed at the bottom surface. An IR blocking material is encased by the upper portion and the lower portion, wherein the IR blocking material is an optically opaque at IR wavelengths and the lower portion is optically transparent at IR wavelengths.

A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

A substrate support assembly and processing chamber having the same are disclosed herein. In one embodiment, a substrate support assembly is provided that includes a body. The body has a center, an outer perimeter connecting a substrate support surface and a backside surface. The body additionally has a pocket disposed on the substrate support surface at the center and a lip disposed between the pocket and the outer perimeter. A layer is formed in the pocket of the substrate support surface. A plurality of discreet islands are disposed in the layer, wherein the discreet islands are disposed about a center line extending perpendicular from the substrate support surface.

Disclosed is a wafer susceptor. A groove bottom of the wafer susceptor is divided by a first dividing line passing through a center of a groove into a first region close to a center of the wafer susceptor and a second region away from the center of the wafer susceptor. The groove bottom includes a groove bottom surface and a convex structure formed on the groove bottom surface. An average height of the convex structure located in the second region is greater than that of the convex structure located in the first region. A design structure of the groove bottom of the wafer susceptor well matches a warped III-V group nitride wafer in an active region epitaxial process.

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

Provided is a re-operation preparation process of a reaction chamber in which epitaxial growth is performed on a wafer. The re-operation preparation process of the reaction chamber includes disposing a susceptor provided in the reaction chamber and on which the wafer is seated at a preset first position and setting a flow rate of a hydrogen gas introduced through a main valve so that the flow rate is greater than that of a hydrogen gas introduced through a slit valve and moving the susceptor to a preset second position and setting an amount of hydrogen gas introduced through the main valve while the susceptor is maintained at the second position so that the amount of hydrogen gas is less than that of hydrogen gas introduced through the slit valve. Thus, moisture and contaminants stagnant in a lower portion of the reaction chamber may be smoothly discharged along a flow of the hydrogen gas toward a discharge hole.

Provided is a re-operation preparation process of a reaction chamber in which epitaxial growth is performed on a wafer. The re-operation preparation process of the reaction chamber includes disposing a susceptor provided in the reaction chamber and on which the wafer is seated at a preset first position and setting a flow rate of a hydrogen gas introduced through a main valve so that the flow rate is greater than that of a hydrogen gas introduced through a slit valve and moving the susceptor to a preset second position and setting an amount of hydrogen gas introduced through the main valve while the susceptor is maintained at the second position so that the amount of hydrogen gas is less than that of hydrogen gas introduced through the slit valve. Thus, moisture and contaminants stagnant in a lower portion of the reaction chamber may be smoothly discharged along a flow of the hydrogen gas toward a discharge hole.