A vacuum system for silicon crystal growth includes a silicon crystal growth chamber, a first vacuum pipe, a second vacuum pipe, and an oxides container. The first vacuum pipe is coupled to the chamber and has within a first brush that is movable in a first direction for removing internal oxides. The second vacuum pipe is coupled to the first vacuum pipe for receiving the internal oxides via the first brush and has within a second brush that is movable in a second direction different from the first direction. The second brush transports the received internal oxides away from the first vacuum pipe. The oxides container is coupled to the second vacuum pipe for receiving the internal oxides via the second brush.

A vacuum system for silicon crystal growth includes a silicon crystal growth chamber, a first vacuum pipe, a second vacuum pipe, and an oxides container. The first vacuum pipe is coupled to the chamber and has within a first brush that is movable in a first direction for removing internal oxides. The second vacuum pipe is coupled to the first vacuum pipe for receiving the internal oxides via the first brush and has within a second brush that is movable in a second direction different from the first direction. The second brush transports the received internal oxides away from the first vacuum pipe. The oxides container is coupled to the second vacuum pipe for receiving the internal oxides via the second brush.

A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.

A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.

A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; and a support portion disposed below the shower plate inside the reaction chamber to place a substrate thereon. Then, the shower plate includes a plurality of first and second lateral gas passages disposed within different horizontal planes and first and second gas ejection holes connected to the first and second lateral gas passages. Further, the shower plate includes a center lateral gas passage that passes through a position directly above the rotation center of the support portion and third gas ejection holes connected to the center lateral gas passage. Then, the gases ejected from the first and second gas ejection holes and the center gas ejection holes are independently controllable.

A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a shower plate disposed in the upper portion of the reaction chamber to supply a gas into the reaction chamber; and a support portion disposed below the shower plate inside the reaction chamber to place a substrate thereon. Then, the shower plate includes a plurality of first and second lateral gas passages disposed within different horizontal planes and first and second gas ejection holes connected to the first and second lateral gas passages. Further, the shower plate includes a center lateral gas passage that passes through a position directly above the rotation center of the support portion and third gas ejection holes connected to the center lateral gas passage. Then, the gases ejected from the first and second gas ejection holes and the center gas ejection holes are independently controllable.

Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.

Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.

A gas scrubber cone condition monitoring system has a sealed gas scrubber cone (9) moveably mounted in a gas pipe (1), a collar (5) fixedly mounted radially outward of the cone in the gas pipe and a pressure tap (12) into the sealed cone. The pressure tap is coupled to a condition monitor (17,18) via an input line (16). An output line (14) from the condition monitor is coupled to a gas pipe (15), downstream of the sealed cone. The condition monitor includes at least one of a pressure gauge and a gas flow meter.

A gas scrubber cone condition monitoring system has a sealed gas scrubber cone (9) moveably mounted in a gas pipe (1), a collar (5) fixedly mounted radially outward of the cone in the gas pipe and a pressure tap (12) into the sealed cone. The pressure tap is coupled to a condition monitor (17,18) via an input line (16). An output line (14) from the condition monitor is coupled to a gas pipe (15), downstream of the sealed cone. The condition monitor includes at least one of a pressure gauge and a gas flow meter.