A reactor system may comprise a first reaction chamber and a second reaction chamber. The first and second reaction chambers may each comprise a reaction space enclosed therein, a susceptor disposed within the reaction space, and a fluid distribution system in fluid communication with the reaction space. The susceptor in each reaction chamber may be configured to support a substrate. The reactor system may further comprise a first reactant source, wherein the first reaction chamber and the second reaction chamber are fluidly coupled to the first reactant source at least partially by a first reactant shared line. The reactor system may be configured to deliver a first reactant from the first reactant source to the first reaction chamber and a second reaction chamber through the first reactant shared line.

An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 μm or more and 10 μm or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 μm or more and 100 μm or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.

An epitaxial silicon carbide single crystal wafer having a small depth of shallow pits and having a high quality silicon carbide single crystal thin film and a method for producing the same are provided. The epitaxial silicon carbide single crystal wafer according to the present invention is produced by forming a buffer layer made of a silicon carbide epitaxial film having a thickness of 1 μm or more and 10 μm or less by adjusting the ratio of the number of carbon to that of silicon (C/Si ratio) contained in a silicon-based and carbon-based material gas to 0.5 or more and 1.0 or less, and then by forming a drift layer made of a silicon carbide epitaxial film at a growth rate of 15 μm or more and 100 μm or less per hour. According to the present invention, the depth of the shallow pits observed on the surface of the drift layer can be set at 30 nm or less.

The present invention relates to a Ga.sub.2O.sub.3 crystal film deposition method according to HVPE, a deposition apparatus, and a Ga.sub.2O.sub.3 crystal film-deposited substrate using the same. According to an embodiment of the present invention, a Ga.sub.2O.sub.3 crystal film deposition method, which includes a first step of supplying GaCl gas onto a single-crystal semiconductor substrate via a central supply channel and a second step of supplying oxygen and HCl gas onto the single-crystal semiconductor substrate onto which the GaCl gas is supplied, is provided.

The present invention relates to a Ga.sub.2O.sub.3 crystal film deposition method according to HVPE, a deposition apparatus, and a Ga.sub.2O.sub.3 crystal film-deposited substrate using the same. According to an embodiment of the present invention, a Ga.sub.2O.sub.3 crystal film deposition method, which includes a first step of supplying GaCl gas onto a single-crystal semiconductor substrate via a central supply channel and a second step of supplying oxygen and HCl gas onto the single-crystal semiconductor substrate onto which the GaCl gas is supplied, is provided.

A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs.

A method of growing an epitaxial layer on a substrate is generally provided. According to the method, the substrate is heated in a chemical vapor deposition chamber to a growth temperature in the presence of a carbon source gas, then the epitaxial layer is grown on the substrate at the growth temperature, and finally the substrate is cooled in a chemical vapor deposition chamber to at least about 80% of the growth temperature in the presence of a carbon source gas. Substrates formed from this method can have a carrier lifetime between about 0.25 μs and about 9.9 μs.

The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.

A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.