A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.

Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

A film stack is formed a workpiece. The film stack is fabricated by sequentially depositing a carbon-doped silicon germanium stack and a silicon film to form a carbon-doped silicon-germanium and silicon mini-stack disposed on a substrate during a deposition cycle. The deposition cycle comprises exposing a workpiece including the substrate to a first gas including a first precursor to deposit a first silicon-germanium layer and exposing the workpiece to a second gas including the first precursor to deposit a carbon-silicon-germanium layer on the first silicon-germanium layer. Further, the deposition cycle includes exposing the workpiece to a third gas including the first precursor to deposit a second silicon-germanium layer on the carbon-silicon-germanium layer. The deposition cycle further includes exposing the workpiece to a fourth gas including a second precursor to deposit the silicon film on the second silicon-germanium layer. The second precursor differs from the first precursor.

Embodiments of the present disclosure generally relate to epitaxial film stacks and vapor deposition processes for preparing the epitaxial film stacks. In one or more embodiments, a multi-layered epitaxial stack is disposed on a substrate, and the multi-layered epitaxial stack contains a plurality of doped silicon-germanium and silicon mini-stacks. Each of the doped silicon germanium stack contains a doped-silicon-germanium layer disposed between a first silicon-germanium layer and a second silicon-germanium layer. Each of the doped-silicon-germanium layers independently contains a concentration of a dopant which may vary or be the same between each of the doped-silicon-germanium layers. The multi-layered epitaxial stack has a dopant gradient based on the concentration of the dopant within each of the doped-silicon-germanium layers such that the multi-layered epitaxial stack has a wafer bow value at a predetermined threshold. The multi-layered epitaxial stack may be used throughout the microelectronics industry.

Embodiments of the present disclosure generally relate to epitaxial film stacks and vapor deposition processes for preparing the epitaxial film stacks. In one or more embodiments, a multi-layered epitaxial stack is disposed on a substrate, and the multi-layered epitaxial stack contains a plurality of doped silicon-germanium and silicon mini-stacks. Each of the doped silicon germanium stack contains a doped-silicon-germanium layer disposed between a first silicon-germanium layer and a second silicon-germanium layer. Each of the doped-silicon-germanium layers independently contains a concentration of a dopant which may vary or be the same between each of the doped-silicon-germanium layers. The multi-layered epitaxial stack has a dopant gradient based on the concentration of the dopant within each of the doped-silicon-germanium layers such that the multi-layered epitaxial stack has a wafer bow value at a predetermined threshold. The multi-layered epitaxial stack may be used throughout the microelectronics industry.

A method for preparing a large-scale two-dimensional single crystal material stack which has an interlayer rotation angle. Single crystal substrates are stacked and rotated at a specific angle, a two-dimensional single crystal material is epitaxial on the surface thereof, and then an upper layer and a lower layer of the two-dimensional single crystal material are attached, and a layer of the single crystal substrates on the surface is removed so as to obtain a two-dimensional single crystal stack which has a specific rotation angle. A large-scale two-dimensional single crystal material stack which has an interlayer rotation angle prepared by the described method.

A method for preparing a large-scale two-dimensional single crystal material stack which has an interlayer rotation angle. Single crystal substrates are stacked and rotated at a specific angle, a two-dimensional single crystal material is epitaxial on the surface thereof, and then an upper layer and a lower layer of the two-dimensional single crystal material are attached, and a layer of the single crystal substrates on the surface is removed so as to obtain a two-dimensional single crystal stack which has a specific rotation angle. A large-scale two-dimensional single crystal material stack which has an interlayer rotation angle prepared by the described method.