A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an α-Al.sub.2O.sub.3 layer. The α-Al.sub.2O.sub.3 layer contains a plurality of α-Al.sub.2O.sub.3 crystal grains and a plurality of κ-Al.sub.2O.sub.3 crystal grains, and has a TC(006) of more than 5 in a texture coefficient TC(hkl). A ratio of C.sub.κ to a sum of C.sub.α and C.sub.κ: [C.sub.κ/(C.sub.α+C.sub.κ)×100](%) is 0.05 to 7%, where C.sub.α is a total number of peak counts of the α-Al.sub.2O.sub.3 crystal grains obtained from measurement data of x-ray diffraction for the coating, and C.sub.κ is a total number of peak counts of the κ-Al.sub.2O.sub.3 crystal grains obtained from the measurement data of the x-ray diffraction for the coating.

A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an α-Al.sub.2O.sub.3 layer. The α-Al.sub.2O.sub.3 layer contains a plurality of α-Al.sub.2O.sub.3 crystal grains and a plurality of κ-Al.sub.2O.sub.3 crystal grains, and has a TC(006) of more than 5 in a texture coefficient TC(hkl). A ratio of C.sub.κ to a sum of C.sub.α and C.sub.κ: [C.sub.κ/(C.sub.α+C.sub.κ)×100](%) is 0.05 to 7%, where C.sub.α is a total number of peak counts of the α-Al.sub.2O.sub.3 crystal grains obtained from measurement data of x-ray diffraction for the coating, and C.sub.κ is a total number of peak counts of the κ-Al.sub.2O.sub.3 crystal grains obtained from the measurement data of the x-ray diffraction for the coating.

In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.

In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.

An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.

An intermediate structure for forming a semiconductor device and method of making is provided. The intermediate device includes (i) a substrate comprising a Ga-based layer, and (ii) optionally, a metal layer on the substrate; wherein at least one of the Ga-based layer and, if present, the metal layer comprises at least a surface region having an isoelectric point of less than 7, usually at most 6.

A substrate processing method is described for forming a titanium nitride material that may be used for superconducting metallization or work function adjustment applications. The substrate processing method includes depositing by vapor phase deposition at least one monolayer of a first titanium nitride film on a substrate, and treating the first titanium nitride film with plasma excited hydrogen-containing gas, where the first titanium nitride film is polycrystalline and the treating increases the (200) crystallographic texture of the first titanium nitride film. The method further includes depositing by vapor phase deposition at least one monolayer of a second titanium nitride film on the treated at least one monolayer of the first titanium nitride film, and treating the at least one monolayer of the second titanium nitride film with plasma excited hydrogen-containing gas.

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I.sub.m/I.sub.c of a maximum intensity I.sub.m of a peak attributed to monoclinic yttrium oxide to a maximum intensity I.sub.c of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤I.sub.m/I.sub.c≤0.002.

Chlorosilanes of the general formula H.sub.nSiCl.sub.4-n and/or H.sub.mCl.sub.6-mSi.sub.2, where n=1-4 and m=0-4, are produced in a fluidized bed reactor by reaction of a hydrogen chloride-containing reaction gas with a silicon contact mass granulation mixture composed of a coarse grain fraction and a fine grain fraction, wherein the average particle size of the fine grain fraction d.sub.50,fine is smaller than the average particle size of the coarse grain fraction d.sub.50,coarse.