A plate-shaped sample with a cross-section perpendicular to a radial direction of a polycrystalline silicon rod as a principal surface is sampled from a region from a center (r=0) of the polycrystalline silicon rod to R/3. Then, the sample is disposed at a position at which a Bragg reflection from a (111) Miller index plane is detected. In-plane rotation with a rotational angle on the sample is performed with a center of the sample as a rotational center such that an X-ray irradiation region defined by a slit performs -scanning on the principal surface of the sample to obtain a diffraction chart indicating dependency of a Bragg reflection intensity from the (111) Miller index plane on a rotational angle of the sample. A ratio (S.sub.p/S.sub.t) between an area S.sub.p of a peak part appearing in the diffraction chart and a total area S.sub.t of the diffraction chart is calculated.

The present invention addresses the problem of providing: a polycrystalline SiC molded article that has a small volume resistivity despite having a small crystal grain size; and a method for producing the same. The present invention provides a polycrystalline SiC molded body in which the average crystal grain size of 5 ?m or less, a nitrogen concentration of 2.7?10.sup.19 to 5.4?10.sup.20 (pcs./cm.sup.3), and the product of the carrier density?Hall mobility of 4.0?10.sup.20 to 6.0?10.sup.21 (pcs./cmVsec).

The present invention addresses the problem of providing: a polycrystalline SiC molded article that has a small volume resistivity despite having a small crystal grain size; and a method for producing the same. The present invention provides a polycrystalline SiC molded body in which the average crystal grain size of 5 ?m or less, a nitrogen concentration of 2.7?10.sup.19 to 5.4?10.sup.20 (pcs./cm.sup.3), and the product of the carrier density?Hall mobility of 4.0?10.sup.20 to 6.0?10.sup.21 (pcs./cmVsec).

A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of warpage of the polycrystalline SiC substrate is 142 m or more.

A support substrate 2 is a polycrystalline SiC substrate formed of polycrystalline SiC. Assuming that one of the two sides of the polycrystalline SiC substrate is a first side and that the other side is a second side, a substrate grain size change rate of the polycrystalline SiC substrate, which is a value obtained by dividing a difference between the average value of crystal grain sizes of the polycrystalline SiC on the first side and the average value of crystal grain sizes of the polycrystalline SiC on the second side by a thickness of the polycrystalline SiC substrate, is 0.43% or less. A radius of curvature of warpage of the polycrystalline SiC substrate is 142 m or more.

In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member.

A self-supporting substrate includes a first nitride layer grown by a hydride vapor deposition method or ammonothermal method and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium; and a second nitride layer grown by a sodium flux method on the first nitride layer and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium. The first nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the first nitride layer. The second nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the second nitride layer. The first nitride layer has a thickness larger than a thickness of the second nitride layer.

A self-supporting substrate includes a first nitride layer grown by a hydride vapor deposition method or ammonothermal method and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium; and a second nitride layer grown by a sodium flux method on the first nitride layer and comprising a nitride of one or more elements selected from the group consisting of gallium, aluminum and indium. The first nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the first nitride layer. The second nitride layer includes a plurality of single crystal grains arranged therein and extending between a pair of main faces of the second nitride layer. The first nitride layer has a thickness larger than a thickness of the second nitride layer.

A cutting tool includes a base material and a coating formed on the base material. The coating includes a hard layer. The hard layer includes a plurality of crystal grains having a sodium chloride-type crystal structure. When the angle of intersection between the normal direction to (001) plane that is a crystal plane of the crystal grain and the normal direction to the surface of the base material is measured, a proportion A of the crystal grains having the angle of intersection of 0 degree or more to less than 20 degrees is 50% or more. The length of 3 grain boundaries is 50% or more of the length of 3-29 grain boundaries and is 1% or more and 30% or less of the total length of all boundaries that is the sum of the length of 3-29 grain boundaries and the length of general boundaries.

A cutting tool includes a base material and a coating formed on the base material. The coating includes a hard layer. The hard layer includes a plurality of crystal grains having a sodium chloride-type crystal structure. When the angle of intersection between the normal direction to (001) plane that is a crystal plane of the crystal grain and the normal direction to the surface of the base material is measured, a proportion A of the crystal grains having the angle of intersection of 0 degree or more to less than 20 degrees is 50% or more. The length of 3 grain boundaries is 50% or more of the length of 3-29 grain boundaries and is 1% or more and 30% or less of the total length of all boundaries that is the sum of the length of 3-29 grain boundaries and the length of general boundaries.