A cutting tool includes a base material and a coating formed on the base material. The coating includes a hard layer. The hard layer includes a plurality of crystal grains having a sodium chloride-type crystal structure. When the angle of intersection between the normal direction to (001) plane that is a crystal plane of the crystal grain and the normal direction to the surface of the base material is measured, a proportion A of the crystal grains having the angle of intersection of 0 degree or more to less than 20 degrees is 50% or more. The length of 3 grain boundaries is 50% or more of the length of 3-29 grain boundaries and is 1% or more and 30% or less of the total length of all boundaries that is the sum of the length of 3-29 grain boundaries and the length of general boundaries.

A cutting tool includes a base material and a coating formed on the base material. The coating includes a hard layer. The hard layer includes a plurality of crystal grains having a sodium chloride-type crystal structure. When the angle of intersection between the normal direction to (001) plane that is a crystal plane of the crystal grain and the normal direction to the surface of the base material is measured, a proportion A of the crystal grains having the angle of intersection of 0 degree or more to less than 20 degrees is 50% or more. The length of 3 grain boundaries is 50% or more of the length of 3-29 grain boundaries and is 1% or more and 30% or less of the total length of all boundaries that is the sum of the length of 3-29 grain boundaries and the length of general boundaries.

A method of fabricating a composite structure including a thin layer of single-crystal silicon carbide on a polycrystalline SiC carrier substrate includes: forming a polycrystalline SiC layer on a donor substrate, at least a surface portion of which is made of single-crystal SiC; before or after forming the polycrystalline SiC layer, implanting ionic species into the surface portion of the donor substrate, so as to form a plane of weakness delimiting a thin single-crystal SiC layer to be transferred; after the implanting of the ionic species and the forming of the polycrystalline SiC layer, bonding the donor substrate and the polycrystalline SiC carrier substrate, the polycrystalline SiC layer being at the bonding interface; and detaching the donor substrate along the plane of weakness, so as to transfer the polycrystalline SiC layer and the thin single-crystal SiC layer onto the polycrystalline SiC carrier substrate.

A method of fabricating a composite structure including a thin layer of single-crystal silicon carbide on a polycrystalline SiC carrier substrate includes: forming a polycrystalline SiC layer on a donor substrate, at least a surface portion of which is made of single-crystal SiC; before or after forming the polycrystalline SiC layer, implanting ionic species into the surface portion of the donor substrate, so as to form a plane of weakness delimiting a thin single-crystal SiC layer to be transferred; after the implanting of the ionic species and the forming of the polycrystalline SiC layer, bonding the donor substrate and the polycrystalline SiC carrier substrate, the polycrystalline SiC layer being at the bonding interface; and detaching the donor substrate along the plane of weakness, so as to transfer the polycrystalline SiC layer and the thin single-crystal SiC layer onto the polycrystalline SiC carrier substrate.

The present invention provides a method for scalable fabrication of ultra-flat polycrystalline diamond membranes, the method comprising: (1) performing chemical vapor deposition on a growth substrate having diamond seeds thereon to grow a polycrystalline diamond membrane, wherein an exposed surface of the polycrystalline diamond membrane is a grown surface having a first roughness; and a surface bonded to the growth substrate is a buried surface; (2) bonding the grown surface to a transfer substrate using an adhesive; and (3) removing the growth substrate to expose the buried surface of the polycrystalline diamond membrane, wherein the buried surface has a second roughness after exposure, and the second roughness is less than the first roughness.

The present invention provides a method for scalable fabrication of ultra-flat polycrystalline diamond membranes, the method comprising: (1) performing chemical vapor deposition on a growth substrate having diamond seeds thereon to grow a polycrystalline diamond membrane, wherein an exposed surface of the polycrystalline diamond membrane is a grown surface having a first roughness; and a surface bonded to the growth substrate is a buried surface; (2) bonding the grown surface to a transfer substrate using an adhesive; and (3) removing the growth substrate to expose the buried surface of the polycrystalline diamond membrane, wherein the buried surface has a second roughness after exposure, and the second roughness is less than the first roughness.

A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an -Al.sub.2O.sub.3 layer. The -Al.sub.2O.sub.3 layer contains a plurality of -Al.sub.2O.sub.3 crystal grains and a plurality of -Al.sub.2O.sub.3 crystal grains, and has a TC(006) of more than 5 in a texture coefficient TC(hkl). A ratio of C.sub. to a sum of C.sub. and C.sub.: [C.sub./(C.sub.+C.sub.)100](%) is 0.05 to 7%, where C.sub. is a total number of peak counts of the -Al.sub.2O.sub.3 crystal grains obtained from measurement data of x-ray diffraction for the coating, and C.sub. is a total number of peak counts of the -Al.sub.2O.sub.3 crystal grains obtained from the measurement data of the x-ray diffraction for the coating.

A surface-coated cutting tool includes a base material and a coating formed on the base material. The coating includes an -Al.sub.2O.sub.3 layer. The -Al.sub.2O.sub.3 layer contains a plurality of -Al.sub.2O.sub.3 crystal grains and a plurality of -Al.sub.2O.sub.3 crystal grains, and has a TC(006) of more than 5 in a texture coefficient TC(hkl). A ratio of C.sub. to a sum of C.sub. and C.sub.: [C.sub./(C.sub.+C.sub.)100](%) is 0.05 to 7%, where C.sub. is a total number of peak counts of the -Al.sub.2O.sub.3 crystal grains obtained from measurement data of x-ray diffraction for the coating, and C.sub. is a total number of peak counts of the -Al.sub.2O.sub.3 crystal grains obtained from the measurement data of the x-ray diffraction for the coating.

Provided is a polycrystalline silicon rod suitable as a raw material for production of single-crystalline silicon. A crystal piece (evaluation sample) is collected from a polycrystalline silicon rod grown by a Siemens method, and a polycrystalline silicon rod in which an area ratio of a crystal grain having a particle size of 100 nm or less is 3% or more is sorted out as the raw material for production of single-crystalline silicon. When single-crystalline silicon is grown by an FZ method using the polycrystalline silicon rod as a raw material, the occurrence of dislocation is remarkably suppressed.

In one aspect, methods of making coated articles are described herein. A method, in some embodiments, comprises providing a substrate, and depositing a coating by chemical vapor deposition (CVD) and/or physical vapor deposition (PVD) over a surface of the substrate, the coating comprising at least one polycrystalline layer, wherein one or more CVD and/or PVD conditions are selected to induce one or more properties of the polycrystalline layer. The presence of the one or more properties in the polycrystalline layer is quantified by two-dimensional (2D) X-ray diffraction analysis.