A method of fabricating a CVD synthetic diamond material, the method comprising providing a compacted diamond carrier material consisting of compacted non-intergrown diamond particles substantially free of a second phase, and growing CVD synthetic diamond material on a surface of the compacted diamond carrier material. Composite diamond bodies made by the method are also described.

A method of fabricating a CVD synthetic diamond material, the method comprising providing a compacted diamond carrier material consisting of compacted non-intergrown diamond particles substantially free of a second phase, and growing CVD synthetic diamond material on a surface of the compacted diamond carrier material. Composite diamond bodies made by the method are also described.

In a diamond-coated tool provided with a blade which includes a base material and a diamond layer formed on the base material, when a length of the blade along an extending direction thereof is denoted by L, and a thickness of the diamond layer of the blade is measured at a total number of 11 points which are arranged from one end of the blade along the extending direction thereof and separated from each other at an interval of L/10, the thickness is the same at all of the 11 points, or a ratio d.sub.min/d.sub.max between a minimum value d.sub.min of the thickness and a maximum value d.sub.max of the thickness is 0.7 or more and less than 1.

A method for producing a body obtained by processing a solid carbon-containing material, the method includes: preparing the solid carbon-containing material composed of a material having at least a surface containing solid carbon; forming a gas phase fluid containing at least one of an active gas or an active plasma which are active against the solid carbon; and processing the solid carbon-containing material by injecting the gas phase fluid onto at least a part of the surface of the solid carbon-containing material.

A method for producing a body obtained by processing a solid carbon-containing material, the method includes: preparing the solid carbon-containing material composed of a material having at least a surface containing solid carbon; forming a gas phase fluid containing at least one of an active gas or an active plasma which are active against the solid carbon; and processing the solid carbon-containing material by injecting the gas phase fluid onto at least a part of the surface of the solid carbon-containing material.

A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm.sup.−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cm.sup.−1 due to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 μm or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.

The present disclosure relates to a method for growing and doping a strained diamond based on a chemical vapor deposition (CVD) method. The method comprises: depositing a gradient buffer layer and a relaxation layer on a substrate layer in sequence by the CVD method; and finally, depositing a CVD strained diamond layer on the relaxation layer and performing doping by the CVD method. According to the method, a lattice constant of the relaxation layer prepared by utilizing the CVD method is greater than a lattice constant of the diamond, so that a diamond generates a stretching strain. In growing and doping processes, the CVD strained diamond is in a stretching strain state. Therefore, a formation energy of a doped element is low, and it is easy to dope the diamond, so that a doping concentration of the diamond is high.

The present invention relates to a free-standing single crystalline diamond part and a single crystalline diamond part production method. The method includes the steps of: —providing a single crystalline diamond substrate or layer; —providing a first adhesion layer on the substrate or layer; —providing a second adhesion layer on the first adhesion layer: —providing a mask layer on the second adhesion layer; —forming at least one indentation or a plurality of indentations through the mask layer and the first and second adhesion layers to expose a portion or portions of the single crystalline diamond substrate or layer; and—etching the exposed portion or portions of the single crystalline diamond substrate or layer and etching entirely through the single crystalline diamond substrate or layer.