A silica glass crucible includes a cylindrical side wall portion, a curved bottom portion, and a corner portion that is provided between the side wall portion and the bottom portion and has a higher curvature than a curvature of the bottom portion, in which a first region provided from a crucible inner surface to a middle in a thickness direction, a second region that is provided outside the first region in the thickness direction and has a different strain distribution from the first region, and a third region that is provided outside the second region in the thickness direction and up to the crucible outer surface and has a different strain distribution from the second region, are provided, and internal residual stresses of the first region and the third region are compressive stresses, whereas an internal residual stress of the second region includes a tensile stress.

A method for forming an isolating layer of a crucible includes placing a round crucible sideways with a bottom surface of an inside thereof perpendicular to a horizontal plane, and then performing a plurality of spraying processes to form the isolating layer on the bottom surface and a wall surface of the round crucible. Each spraying process includes spraying a slurry on the bottom surface; using an optical positioner to set a spraying range the same as one of a plurality of partial areas divided from the wall surface; aligning one of the plurality of partial areas with the spraying range; fixing the round crucible and spraying the slurry in the spraying range; stopping the spraying; and rotating the round crucible to move another partial area to the spraying range. Then, the steps are repeated until the spraying of all the partial areas is completed.

Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.

Methods for determining suitability of a silicon substrate for epitaxy and/or for determining slip resistance during epitaxy and post-epitaxy thermal treatment are disclosed. The methods involve evaluating different substrates of the epitaxial wafers by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which substrates are well-suited for epitaxial and/or post-epi heat treatments.

Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

Disclosed are a Czochralski single crystal furnace for preparing monocrystalline silicon and a method for preparing monocrystalline silicon using the same. The Czochralski single crystal furnace is switchable between a first operation state and a second operation state. In response to the Czochralski single crystal furnace being switched between the first operation state and the second operation state, a first heat-preserving barrel moves relative to a second heat-preserving barrel. In response to the Czochralski single crystal furnace being in the first operation state, a side wall of the second heat-preserving barrel covers a first opening so as to isolate a reaction chamber from outside Czochralski single crystal furnace. In response to the Czochralski single crystal furnace being in the second operation state, the second heat-preserving barrel exposes the first opening, so that the reaction chamber is connected to the outside through the first opening.

Disclosed are a Czochralski single crystal furnace for preparing monocrystalline silicon and a method for preparing monocrystalline silicon using the same. The Czochralski single crystal furnace is switchable between a first operation state and a second operation state. In response to the Czochralski single crystal furnace being switched between the first operation state and the second operation state, a first heat-preserving barrel moves relative to a second heat-preserving barrel. In response to the Czochralski single crystal furnace being in the first operation state, a side wall of the second heat-preserving barrel covers a first opening so as to isolate a reaction chamber from outside Czochralski single crystal furnace. In response to the Czochralski single crystal furnace being in the second operation state, the second heat-preserving barrel exposes the first opening, so that the reaction chamber is connected to the outside through the first opening.