A method for determining an amount of metallic impurities within silicon. The method includes the steps of (a) providing a rodlike silicon sample and a rodlike seed crystal in a zone melting apparatus, (b) zone melting to form a single silicon crystal having a conical end region with a droplike melt forming at the end of the single silicon crystal in a separation step, (c) cooling of the droplike melt to form a solidified silicon drop, (d) partial or complete dissolution of the silicon drop in an acid, and analyzing the solution obtained in step (d) by a trace analysis technique. Wherein the separation step further includes a remelting step for the silicon sample to reduce its diameter, forming a droplike melting zone, and separation of the seed crystal and the silicon sample by moving the seed crystal and the silicon sample apart from one another.

It is possible to carry out an operation to open a reactor while checking a falling over status of a silicon rod. A protective structure (200) includes: a first frame body (201) that is shaped so as to surround a bottom plate (101) of a reactor (100) in which a silicon rod (110) is contained; and a protective wall surface (204) that extends vertically upward from the first frame body (201) and that forms an storage space (210) for the silicon rod (110). The protective wall surface (204) has a mesh structure.

Siemens process rod growth is controlled by measuring rod diameter by a measuring system A and measuring rod temperature by a measuring system B, the two measuring systems located at different positions outside the reactor.

A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.

Provided is a raw material supply unit comprising: a body having a space filled with a raw material; a partition for dividing the body, in the longitudinal direction, into at least two areas; at least two valves each provided in the respective areas in the body divided by the partition so as to open/close the lower portion of the body; and a drive unit for raising, in the vertical direction, each of the valves independently of each other.

Provided is a raw material supply unit comprising: a body having a space filled with a raw material; a partition for dividing the body, in the longitudinal direction, into at least two areas; at least two valves each provided in the respective areas in the body divided by the partition so as to open/close the lower portion of the body; and a drive unit for raising, in the vertical direction, each of the valves independently of each other.

The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

The present disclosure relates to a susceptor having a generally circular body having a face with a radially inward section and a radially outward section which includes a substrate supporting surface elevated relative to the radially inward section. A sidewall surrounds the substrate supporting surface which upon retention of a substrate on the radially outward section, the sidewall surrounds the substrate. The sidewall includes a plurality of humps which protrude from the top surface of the sidewall. Advantageously, the plurality of humps may aid in even thickness of deposition of material at the edge of the substrate.

A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,

A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,