A quartz glass crucible (1) has a structure wherein a peak of a distribution of a total concentration of Na, K, and Ca in a depth direction from an inner surface (10i) of the crucible is present at a position deeper than the inner surface (10i). In an exemplary embodiment, the quartz glass crucible is capable of improving the yield of a silicon single crystal by suppressing peeling-off of brown rings.

A method for manufacturing a semiconductor structure is provided. The method includes a III-V semiconductor device in a first region of a base substrate and a further device in a second region of the base substrate. The method includes: (a) obtaining a base substrate comprising the first region and the second region, different from the first region; (b) providing a buffer layer over a surface of the base substrate at least in the first region, wherein the buffer layer comprises at least one monolayer of a first two-dimensional layered crystal material; (c) forming, over the buffer layer in the first region, and not in the second region, a III-V semiconductor material; and (d) forming, in the second region, at least part of the further device. A semiconductor structure is also provided.

A method for manufacturing a semiconductor structure is provided. The method includes a III-V semiconductor device in a first region of a base substrate and a further device in a second region of the base substrate. The method includes: (a) obtaining a base substrate comprising the first region and the second region, different from the first region; (b) providing a buffer layer over a surface of the base substrate at least in the first region, wherein the buffer layer comprises at least one monolayer of a first two-dimensional layered crystal material; (c) forming, over the buffer layer in the first region, and not in the second region, a III-V semiconductor material; and (d) forming, in the second region, at least part of the further device. A semiconductor structure is also provided.

Embodiments of the present disclosure generally relate to a substrate support having a two-part surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an upper surface and a two-part coating disposed over the upper surface of the body. The two-part coating includes a first coating layer extending a first radial distance from a center of the body. The first coating layer includes at least one of a metal-containing material or alloy. The two-part coating includes a second coating layer disposed over the first coating layer. The second coating layer extends a second radial distance from the center of the body. The first radial distance is greater than the second radial distance. The second coating layer is non-metal.

Embodiments of the present disclosure generally relate to a substrate support having a two-part surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an upper surface and a two-part coating disposed over the upper surface of the body. The two-part coating includes a first coating layer extending a first radial distance from a center of the body. The first coating layer includes at least one of a metal-containing material or alloy. The two-part coating includes a second coating layer disposed over the first coating layer. The second coating layer extends a second radial distance from the center of the body. The first radial distance is greater than the second radial distance. The second coating layer is non-metal.

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

A semiconductor-on-insulator (e.g., silicon-on-insulator) structure having superior radio frequency device performance, and a method of preparing such a structure, is provided by utilizing a single crystal silicon handle wafer sliced from a float zone grown single crystal silicon ingot.

A quartz container manufacturing method and a forming apparatus, relating to the solar photovoltaic technical field, and providing a mold comprising a top cylinder and a mold bottom; during formation of a container blank, when the mold forms a first included angle with a horizontal plane and the mold is rotated at a first rotation speed, the source material forms a first blank on the inner wall of the top cylinder; when the mold forms a second included angle with the horizontal plane and the mold is rotated at a second rotation speed, the source material forms a second blank on the inner wall of the mold bottom; a quartz container is manufactured from a container blank composed of the first blank and the second blank.

Provided are a method of manufacturing a ring-shaped member and the ring-shaped member. A method of manufacturing a ring-shaped member to be placed in a process chamber of a substrate processing apparatus includes arranging one silicon member and another silicon member to cause one abutting surface of the one silicon member and another abutting surface of the other silicon member to abut on each other, heating the one abutting surface and the other abutting surface through optical heating to melt silicon on a surface of the one abutting surface and silicon on a surface of the other abutting surface such that silicon melt is caused to flow into a gap between the one abutting surface and the other abutting surface, and cooling the one abutting surface and the other abutting surface to crystallize the silicon melt forming a silicon adhesion part.

Provided are a method of manufacturing a ring-shaped member and the ring-shaped member. A method of manufacturing a ring-shaped member to be placed in a process chamber of a substrate processing apparatus includes arranging one silicon member and another silicon member to cause one abutting surface of the one silicon member and another abutting surface of the other silicon member to abut on each other, heating the one abutting surface and the other abutting surface through optical heating to melt silicon on a surface of the one abutting surface and silicon on a surface of the other abutting surface such that silicon melt is caused to flow into a gap between the one abutting surface and the other abutting surface, and cooling the one abutting surface and the other abutting surface to crystallize the silicon melt forming a silicon adhesion part.