A method of fabricating at least one single-crystal alloy semiconductor structure. At least one seed, containing an alloying material, on a substrate for growth of at least one single-crystal alloy semiconductor structure is formed. At least one structural form, formed of a host material, on the substrate is crystallized to form the at least one single-crystal alloy semiconductor structure. The at least one structural form is heated such that the material of the at least one structural form has a liquid state. Also, the at least one structural form is cooled, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in a main body of the respective structural form away from the respective seed.

A high-temperature forming device for imperfect single-crystal wafers used for a neutron monochromator includes a heating electric furnace, a temperature control system, a die system, a loading system, a vacuum protection system, and an auxiliary system. Where a furnace mouth of the heating electric furnace faces downwards, the heating electric furnace can be lifted vertically or a hearth of the heating electric furnace can be opened and closed. A vacuum protection cavity is formed by a glass cover and a blocking flange, a through hole is formed in one end of the glass cover, and the other end of the glass cover is closed. An operation opening is formed in the glass cover, the die system includes an upper die, a middle die, and a lower die, the middle die is a composite die.

A high-temperature forming device for imperfect single-crystal wafers used for a neutron monochromator includes a heating electric furnace, a temperature control system, a die system, a loading system, a vacuum protection system, and an auxiliary system. Where a furnace mouth of the heating electric furnace faces downwards, the heating electric furnace can be lifted vertically or a hearth of the heating electric furnace can be opened and closed. A vacuum protection cavity is formed by a glass cover and a blocking flange, a through hole is formed in one end of the glass cover, and the other end of the glass cover is closed. An operation opening is formed in the glass cover, the die system includes an upper die, a middle die, and a lower die, the middle die is a composite die.

An apparatus for manufacturing hexagonal crystals using HVPE includes: a reaction tube; a reaction boat disposed on one side in the reaction tube; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the reaction boat; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the reaction boat; and a heater for heating the reaction tube. The reaction boat includes a source part for receiving source materials; and a crystal growth part disposed beneath the source part and having a depressed growth mold of a predetermined shape. The source part includes: at least one penetration hole formed on a bottom surface; a first allocating area formed around the at least one penetration hole, for receiving aluminum; and a second allocating area formed around the first allocating area, for receiving a main material of the hexagonal crystal and gallium.

An apparatus for manufacturing hexagonal crystals using HVPE includes: a reaction tube; a reaction boat disposed on one side in the reaction tube; a halogenation reaction gas supply pipe for supplying a halogenation reaction gas to the reaction boat; a nitrification reaction gas supply pipe for supplying a nitrification reaction gas to the reaction boat; and a heater for heating the reaction tube. The reaction boat includes a source part for receiving source materials; and a crystal growth part disposed beneath the source part and having a depressed growth mold of a predetermined shape. The source part includes: at least one penetration hole formed on a bottom surface; a first allocating area formed around the at least one penetration hole, for receiving aluminum; and a second allocating area formed around the first allocating area, for receiving a main material of the hexagonal crystal and gallium.

Described herein are apparatuses, systems, and methods associated with metal-assisted transistors. A single crystal semiconductor material may be seeded from a metal. The single crystal semiconductor material may form a channel region, a source, region, and/or a drain region of the transistor. The metal may form the source contact or drain contact, and the source region, channel region, and drain region may be stacked vertically on the source contact or drain contact. Alternatively, a metal-assisted semiconductor growth process may be used to form a single crystal semiconductor material on a dielectric material adjacent to the metal. The portion of the semiconductor material on the dielectric material may be used to form the transistor. Other embodiments may be described and claimed.

Described herein are apparatuses, systems, and methods associated with metal-assisted transistors. A single crystal semiconductor material may be seeded from a metal. The single crystal semiconductor material may form a channel region, a source, region, and/or a drain region of the transistor. The metal may form the source contact or drain contact, and the source region, channel region, and drain region may be stacked vertically on the source contact or drain contact. Alternatively, a metal-assisted semiconductor growth process may be used to form a single crystal semiconductor material on a dielectric material adjacent to the metal. The portion of the semiconductor material on the dielectric material may be used to form the transistor. Other embodiments may be described and claimed.

A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.

A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.

Described herein are apparatuses, systems, and methods associated with metal-assisted transistors. A single crystal semiconductor material may be seeded from a metal. The single crystal semiconductor material may form a channel region, a source, region, and/or a drain region of the transistor. The metal may form the source contact or drain contact, and the source region, channel region, and drain region may be stacked vertically on the source contact or drain contact. Alternatively, a metal-assisted semiconductor growth process may be used to form a single crystal semiconductor material on a dielectric material adjacent to the metal. The portion of the semiconductor material on the dielectric material may be used to form the transistor. Other embodiments may be described and claimed.