Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

Inorganic perovskites doped with oxygen atoms or fluorine atoms, methods for making the doped perovskites, and hard radiation detectors incorporating the doped perovskites as photoactive layers are provided. The doped perovskites utilize lead oxide, lead fluoride, or compounds that thermally decompose into lead oxide or lead fluoride as dopant atom sources. During the crystallization of a perovskite in the presence of the dopant atom sources, oxygen or fluoride atoms from the dopant source are incorporated into the perovskite crystal lattice.

Inorganic perovskites doped with oxygen atoms or fluorine atoms, methods for making the doped perovskites, and hard radiation detectors incorporating the doped perovskites as photoactive layers are provided. The doped perovskites utilize lead oxide, lead fluoride, or compounds that thermally decompose into lead oxide or lead fluoride as dopant atom sources. During the crystallization of a perovskite in the presence of the dopant atom sources, oxygen or fluoride atoms from the dopant source are incorporated into the perovskite crystal lattice.

The present disclosure relates to a method of preparing a halide perovskite single crystal, including a process of enhancing a solubility of a precursor by using a low-temperature solvent.

A rare earth halide scintillation material the chemical formula of the material being CeBr.sub.3+x, wherein 0.0001x0.1. The rare earth halide scintillation material has excellent scintillation properties including high light output, high energy resolution, and fast decay.

A method of producing an apatite crystal includes the steps of preparing an apatite single crystal expressed by the general formula M.sup.2.sub.5(PO.sub.4).sub.3X (M.sup.2 being at least atomic element selected from the group consisting of divalent alkaline-earth metals and Eu, and X is at least one atomic selected from the group consisting of halogens); placing the apatite single crystal into a space controllable to a predetermined atmosphere; supplying water vapor into the space; and heating such that the atmosphere in the space is within a 1000° C. to 1400° C. range.

A method of producing an apatite crystal includes the steps of preparing an apatite single crystal expressed by the general formula M.sup.2.sub.5(PO.sub.4).sub.3X (M.sup.2 being at least atomic element selected from the group consisting of divalent alkaline-earth metals and Eu, and X is at least one atomic selected from the group consisting of halogens); placing the apatite single crystal into a space controllable to a predetermined atmosphere; supplying water vapor into the space; and heating such that the atmosphere in the space is within a 1000° C. to 1400° C. range.

The present disclosure relates to a method that includes depositing a first layer onto a substrate, depositing a second layer onto a surface of the first layer, and separating the substrate from the second layer, where the substrate includes a first III-V alloy, the second layer includes second III-V alloy, and the first layer includes a material that includes at least two of a Group 1A element, a Group 2A element, a Group 6A element, and/or a halogen.

The present disclosure relates to a method that includes depositing a first layer onto a substrate, depositing a second layer onto a surface of the first layer, and separating the substrate from the second layer, where the substrate includes a first III-V alloy, the second layer includes second III-V alloy, and the first layer includes a material that includes at least two of a Group 1A element, a Group 2A element, a Group 6A element, and/or a halogen.

The present invention provides a crystal of a europium compound containing europium. The present invention enables the preparation of a crystal of a europium compound having a powder X-ray diffraction pattern having a first diffraction peak in diffraction angle (2θ) range of 34.3° to 36.1° in which a half width of the first diffraction peak is 1.8° or less, and/or having a second diffraction peak in diffraction angle (2θ) range of 28.6° to 29.6° and a third diffraction peak in diffraction angle (2θ) range of 36.8° to 38.4° in which a half width of the second diffraction peak is 1.0° or less and a half width of the third diffraction peak is 1.6° or less, and being at least one compound selected from compounds represented by formulae (1) to (4):

EuCl.sub.x  (1)

Eu(OH).sub.2  (2)

Eu(OH).sub.2Cl  (3)

EuOCl  (4) x is 0.05 or more and 5 or less.