A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

The present invention relates to a Ga.sub.2O.sub.3 crystal film deposition method according to HVPE, a deposition apparatus, and a Ga.sub.2O.sub.3 crystal film-deposited substrate using the same. According to an embodiment of the present invention, a Ga.sub.2O.sub.3 crystal film deposition method, which includes a first step of supplying GaCl gas onto a single-crystal semiconductor substrate via a central supply channel and a second step of supplying oxygen and HCl gas onto the single-crystal semiconductor substrate onto which the GaCl gas is supplied, is provided.

The present invention relates to a Ga.sub.2O.sub.3 crystal film deposition method according to HVPE, a deposition apparatus, and a Ga.sub.2O.sub.3 crystal film-deposited substrate using the same. According to an embodiment of the present invention, a Ga.sub.2O.sub.3 crystal film deposition method, which includes a first step of supplying GaCl gas onto a single-crystal semiconductor substrate via a central supply channel and a second step of supplying oxygen and HCl gas onto the single-crystal semiconductor substrate onto which the GaCl gas is supplied, is provided.

A method of growing a conductive Ga.sub.2O.sub.3-based crystal film by MBE includes producing a Ga vapor and a Si-containing vapor and supplying the vapors as molecular beams onto a surface of a Ga.sub.2O.sub.3-based crystal substrate so as to grow the Ga.sub.2O.sub.3-based crystal film. The Ga.sub.2O.sub.3-based crystal film includes a Si-containing Ga.sub.2O.sub.3-based single crystal film. The Si-containing vapor is produced by heating Si or a Si compound and Ga while allowing the Si or a Si compound to contact with the Ga.

A method of growing a conductive Ga.sub.2O.sub.3-based crystal film by MBE includes producing a Ga vapor and a Si-containing vapor and supplying the vapors as molecular beams onto a surface of a Ga.sub.2O.sub.3-based crystal substrate so as to grow the Ga.sub.2O.sub.3-based crystal film. The Ga.sub.2O.sub.3-based crystal film includes a Si-containing Ga.sub.2O.sub.3-based single crystal film. The Si-containing vapor is produced by heating Si or a Si compound and Ga while allowing the Si or a Si compound to contact with the Ga.

A problem to be solved is to provide a method for processing zirconia without producing a monoclinic crystal. The solution is a method for processing zirconia, including the step of irradiating the zirconia with a laser with a pulse duration of 10.sup.−12 seconds to 10.sup.−15 seconds at an intensity of 10.sup.13 to 10.sup.15 W/cm.sup.2.

A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

A method may include stretching a deformable bounding element into a stretched state. The method may further include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is in the stretched state and assembling an optical lens assembly including the deformable bounding element, such that the optical lens assembly adjusts at least one optical property by controlling a shape of the deformable bounding element. The deformable bounding element may have less tension when in a neutral state than the deformable bounding element has when in the stretched state. The method may additionally include coating the deformable bounding element with at least one layer of an anti-reflective material while the deformable bounding element is not in a stretched state. Various other apparatuses, systems, and methods are also disclosed.