Patent classifications
C30B29/34
ZEOLITE PRODUCTION METHOD
Disclosed is a method for readily and inexpensively producing zeolite without using an organic structure-directing agent (organic SDA). Specifically disclosed is a method whereby a gel containing a silica source, an alumina source, an alkaline source and water is reacted with zeolite seed crystals, to produce a zeolite with the same kind of skeletal structure as the zeolite. The gel used is a gel of a composition whereby, when a zeolite is synthesized from this gel only, the synthesized zeolite comprises at least one of the kinds of composite building units of the target zeolite.
ZEOLITE PRODUCTION METHOD
Disclosed is a method for readily and inexpensively producing zeolite without using an organic structure-directing agent (organic SDA). Specifically disclosed is a method whereby a gel containing a silica source, an alumina source, an alkaline source and water is reacted with zeolite seed crystals, to produce a zeolite with the same kind of skeletal structure as the zeolite. The gel used is a gel of a composition whereby, when a zeolite is synthesized from this gel only, the synthesized zeolite comprises at least one of the kinds of composite building units of the target zeolite.
ZEOLITE PRODUCTION METHOD
Disclosed is a method for readily and inexpensively producing zeolite without using an organic structure-directing agent (organic SDA). Specifically disclosed is a method whereby a gel containing a silica source, an alumina source, an alkaline source and water is reacted with zeolite seed crystals, to produce a zeolite with the same kind of skeletal structure as the zeolite. The gel used is a gel of a composition whereby, when a zeolite is synthesized from this gel only, the synthesized zeolite comprises at least one of the kinds of composite building units of the target zeolite.
CRYSTAL GROWTH METHOD, AND CRYSTAL GROWTH DEVICE
A crystal growth method comprises: in a process of growing a crystal by using a pulling method, controlling an induction coil to move downwards with respect a crucible, wherein the induction coil moves with an acceleration after the crystal enters an equal-diameter stage, and the moving speed of the induction coil tends to continuously increase during the entire moving process of the induction coil. According to the crystal growth method, a change in a temperature gradient of a crystal growth interface caused by the internal temperature distribution of the crucible can be compensated, a continuous and stable temperature field environment is provided for crystal growth, and defects generated during a crystal growth process are reduced.
Single crystals with internal doping with laser ions prepared by a hydrothermal method
Single heterogeneous crystals are described that contain multiple regimes, adjacent regimes varying from one another with regard to function. Also disclosed is a hydrothermal epitaxial growth process that can be utilized to form the single heterogeneous crystals. The single heterogeneous crystals can exhibit enhanced performance when used as a laser gain medium as compared to previously known single crystals and multi-crystal constructs. The heterogeneous single crystal can be utilized for thin disk lasers and can minimize the thermal distortion effects at high powers. The heterogeneous crystal can also serve as an embedded waveguide.
Single crystals with internal doping with laser ions prepared by a hydrothermal method
Single heterogeneous crystals are described that contain multiple regimes, adjacent regimes varying from one another with regard to function. Also disclosed is a hydrothermal epitaxial growth process that can be utilized to form the single heterogeneous crystals. The single heterogeneous crystals can exhibit enhanced performance when used as a laser gain medium as compared to previously known single crystals and multi-crystal constructs. The heterogeneous single crystal can be utilized for thin disk lasers and can minimize the thermal distortion effects at high powers. The heterogeneous crystal can also serve as an embedded waveguide.
Zeolite production method
Disclosed is a method for readily and inexpensively producing zeolite without using an organic structure-directing agent (organic SDA). Specifically disclosed is a method whereby a gel containing a silica source, an alumina source, an alkaline source and water is reacted with zeolite seed crystals, to produce a zeolite with the same kind of skeletal structure as the zeolite. The gel used is a gel of a composition whereby, when a zeolite is synthesized from this gel only, the synthesized zeolite comprises at least one of the kinds of composite building units of the target zeolite.
METHODS FOR SELF-SEEDED HYDROTHERMAL GROWTH OF MFI ZEOLITE NANOSHEETS AND NANOSHEET ASSEMBLIES AND FOR TILING NANOSHEET ZEOLITE PLATES ON POLYMER SUPPORTS
The present invention relates to methods for synthesizing MFI zeolite nanosheet (ZN) assemblies and open-pore ZN plates and for tiling ZN plates on polymer supports. Methods for producing ZN assemblies and ZN plates may reduce or eliminate the need to synthesize nanoparticle (NP) seed-evolved single-crystal zeolite nanosheets (ZNs) as an intermediate product. Methods for tiling ZN plates on polymer supports may produce ZN plate-tiled (ZNPT) membranes with reduced permeation through intercrystalline spaces.
METHODS FOR SELF-SEEDED HYDROTHERMAL GROWTH OF MFI ZEOLITE NANOSHEETS AND NANOSHEET ASSEMBLIES AND FOR TILING NANOSHEET ZEOLITE PLATES ON POLYMER SUPPORTS
The present invention relates to methods for synthesizing MFI zeolite nanosheet (ZN) assemblies and open-pore ZN plates and for tiling ZN plates on polymer supports. Methods for producing ZN assemblies and ZN plates may reduce or eliminate the need to synthesize nanoparticle (NP) seed-evolved single-crystal zeolite nanosheets (ZNs) as an intermediate product. Methods for tiling ZN plates on polymer supports may produce ZN plate-tiled (ZNPT) membranes with reduced permeation through intercrystalline spaces.
Cantilever device for extending capacity of a scale used in a crystal growth apparatus
A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale.