Patent classifications
C30B29/34
Crystal Growth Atmosphere For Oxyorthosilicate Materials Production
A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.
Crystal Growth Atmosphere For Oxyorthosilicate Materials Production
A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.
ZEOLITE COMPOSITIONS AND METHODS FOR TAILORING ZEOLITE CRYSTAL HABITS WITH GROWTH MODIFIERS
Embodiments of the invention generally provide compositions of crystalline zeolite materials with tailored crystal habits and the methods for forming such crystalline zeolite materials. The methods for forming the crystalline zeolite materials include binding one or more zeolite growth modifiers (ZGMs) to the surface of a zeolite crystal, which results in the modification of crystal growth rates along different crystallographic directions, leading to the formation of zeolites having a tailored crystal habit. The improved properties enabled by the tailored crystal habit include a minimized crystal thickness, a shortened internal diffusion pathlength, and a greater step density as compared to a zeolite having the native crystal habit prepared by traditional processes. The tailored crystal habit provides the crystalline zeolite materials with an aspect ratio of about 4 or greater and crystal surfaces having a step density of about 25 steps/m.sup.2 or greater.
ZEOLITE COMPOSITIONS AND METHODS FOR TAILORING ZEOLITE CRYSTAL HABITS WITH GROWTH MODIFIERS
Embodiments of the invention generally provide compositions of crystalline zeolite materials with tailored crystal habits and the methods for forming such crystalline zeolite materials. The methods for forming the crystalline zeolite materials include binding one or more zeolite growth modifiers (ZGMs) to the surface of a zeolite crystal, which results in the modification of crystal growth rates along different crystallographic directions, leading to the formation of zeolites having a tailored crystal habit. The improved properties enabled by the tailored crystal habit include a minimized crystal thickness, a shortened internal diffusion pathlength, and a greater step density as compared to a zeolite having the native crystal habit prepared by traditional processes. The tailored crystal habit provides the crystalline zeolite materials with an aspect ratio of about 4 or greater and crystal surfaces having a step density of about 25 steps/m.sup.2 or greater.
CRYSTAL MATERIAL AND METHOD OF MANUFACTURING THE SAME
The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE.sub.3ME.sub.1+a(Ga.sub.1-xAl.sub.x).sub.3+bSi.sub.2+cO.sub.14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0x1, 0.5<a0 or 0<a<0.5, 0.5<b0 or 0<b0.5, and 0.5<c0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.
CRYSTAL MATERIAL AND METHOD OF MANUFACTURING THE SAME
The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AE.sub.3ME.sub.1+a(Ga.sub.1-xAl.sub.x).sub.3+bSi.sub.2+cO.sub.14 (AE is an alkaline-earth metal, ME is Nb or Ta, 0x1, 0.5<a0 or 0<a<0.5, 0.5<b0 or 0<b0.5, and 0.5<c0 or 0<c<0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.
Scintillation crystal including a co-doped rare earth silicate, a radiation detection apparatus including the scintillation crystal, and a process of forming the same
A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
Scintillation crystal including a co-doped rare earth silicate, a radiation detection apparatus including the scintillation crystal, and a process of forming the same
A scintillation crystal can include a rare earth silicate, an activator, and a Group 2 co-dopant. In an embodiment, the Group 2 co-dopant concentration may not exceed 200 ppm atomic in the crystal or 0.25 at % in the melt before the crystal is formed. The ratio of the Group 2 concentration/activator atomic concentration can be in a range of 0.4 to 2.5. In another embodiment, the scintillation crystal may have a decay time no greater than 40 ns, and in another embodiment, have the same or higher light output than another crystal having the same composition except without the Group 2 co-dopant. In a further embodiment, a boule can be grown to a diameter of at least 75 mm and have no spiral or very low spiral and no cracks. The scintillation crystal can be used in a radiation detection apparatus and be coupled to a photosensor.
Crystal growth atmosphere for oxyorthosilicate materials production
A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.
Crystal growth atmosphere for oxyorthosilicate materials production
A method of growing a rare-earth oxyorthosilicate crystal, and crystals grown using the method are disclosed. The method includes preparing a melt by melting a first substance including at least one first rare-earth element and providing an atmosphere that includes an inert gas and a gas including oxygen.