An object of the present invention is to provide a high-quality SiC semiconductor device. In order to solve the above problem, the present invention comprises a method for producing a SiC semiconductor device, comprising a growth step of forming a growth layer on a workpiece comprising SiC single crystals, a device formation step of forming at least a portion of a SiC semiconductor device in the growth layer, and a separation step of separating at least a portion of the SiC semiconductor device from the workpiece.

The present invention relates to methods for preparing silicon carbide powder and single crystal silicon carbide and, more particularly, to a method for preparing silicon carbide powder including: providing a precursor gas onto a fibrous carbon body in a reactor to deposit silicon carbide (SiC) on the fibrous carbon body; recovering the silicon carbide deposited on the fibrous carbon body to obtain a first silicon carbide powder; and oxidizing the first silicon carbide powder, wherein a molecule of the precursor gas include a silicon atom and a carbon atom.

The present invention relates to methods for preparing silicon carbide powder and single crystal silicon carbide and, more particularly, to a method for preparing silicon carbide powder including: providing a precursor gas onto a fibrous carbon body in a reactor to deposit silicon carbide (SiC) on the fibrous carbon body; recovering the silicon carbide deposited on the fibrous carbon body to obtain a first silicon carbide powder; and oxidizing the first silicon carbide powder, wherein a molecule of the precursor gas include a silicon atom and a carbon atom.

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material.

The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I)=(peak intensity of plane (200)+peak intensity of plane (220))/peak intensity of plane (111).

The present invention relates to an SiC material and an SiC composite material and, more particularly, to an SiC material and an SiC composite material having a diffraction intensity ratio (I) of an X-ray diffraction peak, calculated by formula 1 down below, of less than 1.5. The present invention can provide an SiC material and an SiC composite material which can be etched evenly when exposed to plasma and thereby reduce the occurrence of cracks, holes and so forth. [Formula 1] Diffraction intensity ratio (I)=(peak intensity of plane (200)+peak intensity of plane (220))/peak intensity of plane (111).

A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.