A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H.sub.2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

A process for preparing stacks of metal chalcogenide flakes includes: (a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide; (b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes, wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms, preferably between 6 and 14 carbon atoms.

A process for preparing stacks of metal chalcogenide flakes includes: (a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide; (b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes, wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms, preferably between 6 and 14 carbon atoms.

This disclosure provides an apparatus to manipulate the crystal morphology of a powder to improve the flow of a powder from a vessel and/or flowability of a powder in order to achieve stable fluidization of the powder within a vessel.

This disclosure provides an apparatus to manipulate the crystal morphology of a powder to improve the flow of a powder from a vessel and/or flowability of a powder in order to achieve stable fluidization of the powder within a vessel.

Disclosed is a method of fabricating a Janus transition metal dichalcogenide thin film. More particularly, the method includes a first step of depositing a transition metal dichalcogenide thin film including a first chalcogen element on an oxide silicon substrate; a second step of a vacancy forming in the transition metal dichalcogenide thin film; and a third step of substituting the first chalcogen element with a second chalcogen element to form a Janus transition metal dichalcogenide thin film. The first step, the second step, and the third step may be performed in a single CVD process in a same reaction chamber.

Therefore, the present disclosure can shorten the processing time of a Janus transition metal dichalcogenide thin film and can reduce the manufacturing cost thereof. In addition, the present disclosure can minimize damage to the Janus transition metal dichalcogenide thin film during the fabrication process, thereby being capable of a high-quality single-crystal Janus transition metal dichalcogenide thin film.

Disclosed is a method of fabricating a Janus transition metal dichalcogenide thin film. More particularly, the method includes a first step of depositing a transition metal dichalcogenide thin film including a first chalcogen element on an oxide silicon substrate; a second step of a vacancy forming in the transition metal dichalcogenide thin film; and a third step of substituting the first chalcogen element with a second chalcogen element to form a Janus transition metal dichalcogenide thin film. The first step, the second step, and the third step may be performed in a single CVD process in a same reaction chamber.

Therefore, the present disclosure can shorten the processing time of a Janus transition metal dichalcogenide thin film and can reduce the manufacturing cost thereof. In addition, the present disclosure can minimize damage to the Janus transition metal dichalcogenide thin film during the fabrication process, thereby being capable of a high-quality single-crystal Janus transition metal dichalcogenide thin film.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

Filled carbon nanotubes (CNTs) and methods of synthesizing the same are provided. An in situ chemical vapor deposition technique can be used to synthesize CNTs filled with metal sulfide nanowires. The CNTs can be completely and continuously filled with the metal sulfide fillers up to several micrometers in length. The filled CNTs can be easily collected from the substrates used for synthesis using a simple ultrasonication method.

Inorganic compounds having the formula LiMP.sub.2Q.sub.6, where M is Ga, In, Bi, Sb, As, Al, or a combination thereof, and Q is S and/or Se, are provided. Methods and devices for detecting incident neutrons and alpha-particles using the compounds are also provided. For thermal neutron detection applications, the compounds can be enriched with lithium-6 isotope (.sup.6Li) to enhance their neutron detecting capabilities.