A TiAl intermetallic compound single crystal material and a preparation method therefor are disclosed. The alloy composition of the material comprises Ti.sub.aAl.sub.bNb.sub.c(C, Si).sub.d, wherein 43≦b≦49, 2≦c≦10, a+b+c=100, and 0≦d≦1 (at. %).

A mould for casting a component in a directional solidification casting process having a preferred direction of grain growth (non-axial <001>) comprises a shell defining a cavity for receiving molten material. The cavity defines a three dimensional shape made up of a finished component geometry portion (42, 43, 44) and a sacrificial geometry portion (45) wherein the sacrificial geometry portion (45) includes a notch (48) which is shaped and positioned so as to, in use, contain high angle grain boundaries between dendritic growth in the preferred direction (non-axial <001>) and dendritic growth in a competing direction to the preferred direction (axial <001>) within the sacrificial geometry portion of a casting solidifying in the mould.

Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si.sub.1-xGe.sub.x film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si.sub.1-xGe.sub.x film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.

The invention relates to a method for producing a blade (10) for a turbo machine, especially for an aviation engine, comprising at least the following steps: provision of a monocrystalline or polycrystalline basic body (14) with a supporting surface (16), and generative construction of a blade airfoil (12) of the blade (10) on the supporting surface (16) by layer-by-layer melting and/or sintering of a metallic and/or ceramic powder consisting of a first material (18) or material mixture; and separation of the blade airfoil (12) from the supporting surface (16) of the basic body (14) on a parting surface (20) of the blade airfoil (12).

A further aspect of the invention relates to a blade which is obtainable and/or is obtained by means of such a method.

The invention relates to a nickel-based superalloy comprising, in percentages by mass, 5.0 to 6.0% aluminum, 6.0 to 9.5% tantalum, 0 to 1.50% titanium, 8.0 to 10.0% cobalt, 6.0 to 7.0% chromium, 0.30 to 0.90% molybdenum, 5.5 to 6.5% tungsten, 0 to 2.50% rhenium, 0.05 to 0.15% hafnium, 0.70 to 4.30% platinum, 0 to 0.15% silicon, the remainder being nickel and unavoidable impurities. The invention also relates to a single-crystal blade comprising such an alloy and a turbomachine comprising such a blade.

The invention relates to a nickel-based superalloy comprising, in percentages by mass, 5.0 to 6.0% aluminum, 6.0 to 9.5% tantalum, 0 to 1.50% titanium, 8.0 to 10.0% cobalt, 6.0 to 7.0% chromium, 0.30 to 0.90% molybdenum, 5.5 to 6.5% tungsten, 0 to 2.50% rhenium, 0.05 to 0.15% hafnium, 0.70 to 4.30% platinum, 0 to 0.15% silicon, the remainder being nickel and unavoidable impurities. The invention also relates to a single-crystal blade comprising such an alloy and a turbomachine comprising such a blade.

Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

A method of fabricating at least one single-crystal alloy semiconductor structure. At least one seed, containing an alloying material, on a substrate for growth of at least one single-crystal alloy semiconductor structure is formed. At least one structural form, formed of a host material, on the substrate is crystallized to form the at least one single-crystal alloy semiconductor structure. The at least one structural form is heated such that the material of the at least one structural form has a liquid state. Also, the at least one structural form is cooled, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in a main body of the respective structural form away from the respective seed.