A method of fabricating at least one single-crystal alloy semiconductor structure. At least one seed, containing an alloying material, on a substrate for growth of at least one single-crystal alloy semiconductor structure is formed. At least one structural form, formed of a host material, on the substrate is crystallized to form the at least one single-crystal alloy semiconductor structure. The at least one structural form is heated such that the material of the at least one structural form has a liquid state. Also, the at least one structural form is cooled, such that the material of the at least one structural form nucleates at the least one seed and crystallizes as a single crystal to provide at least one single-crystal alloy semiconductor structure, with a growth front of the single crystal propagating in a main body of the respective structural form away from the respective seed.

A casting method includes: forming a seed, the seed having a first end and a second end, the forming including bending a seed precursor; placing the seed second end in contact or spaced facing relation with a chill plate; contacting the first end with molten material; and cooling and solidifying the molten material so that a crystalline structure of the seed propagates into the solidifying material. The forming further included reducing a thickness of the seed proximate the first end relative to a thickness of the seed proximate the second end.

Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

A recycling and synthesis of charge material for secondary batteries generates single-crystal charge materials for producing batteries with greater charge cycle longevity. Charge material particles undergo a heating for fusing or enhancing grain boundaries between polycrystalline particles. The resulting, more well-defined grain boundaries are easily etched by a relatively weak mineral acid solution. The acid solution removes material at the grain boundaries to separate secondary particles into primary particles along the grain boundaries. The resulting single crystal (monocrystalline) charge material particles are washed and filtered, and typically re-sintered to accommodate any needed lithium (lithium carbonate), and result in a charge material with larger surface area, higher lithium diffusivity and lower cation ordering.

Provided is a supergravity directional solidification melting furnace equipment, including a supergravity test chamber and, mounted in the supergravity test chamber, a high-temperature heating subsystem, a crucible, and an air-cooling system. The supergravity test chamber is mounted with a wiring electrode and a cooling air valve device. The high-temperature heating subsystem is fixed in the supergravity test chamber. The crucible and the air cooling system are provided in the high-temperature heating subsystem. The high-temperature heating subsystem includes upper, middle, and lower furnaces, a mullite insulating layer, upper and lower heating cavity outer bodies, upper and lower heating furnace pipes, and a crucible support base. A high-temperature heating cavity is divided into upper and lower parts, is provided therein with a spiral groove, and is fitted with a heating element. The crucible support base is provided therein with a vent pipe channel into which a cooling air is introduced. The crucible and the air cooling system include air inlet and exhaust pipes, a cooling base, a cooling rate adjustment ring, the crucible, and an exhaust cover.

One embodiment of the present invention includes single-crystal particles of a TbCu.sub.7 type samarium-iron-nitrogen based alloy in an anisotropic magnet powder.

One embodiment of the present invention includes single-crystal particles of a TbCu.sub.7 type samarium-iron-nitrogen based alloy in an anisotropic magnet powder.

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1−xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1−xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.