A method of forming a semiconductor structure includes forming a first material over a base material by vapor phase epitaxy. The first material has a crystalline portion and an amorphous portion. The amorphous portion of the first material is removed by abrasive planarization. At least a second material is formed by vapor phase epitaxy over the crystalline portion of first material. The second material has a crystalline portion and an amorphous portion. The amorphous portion of the second material is removed by abrasive planarization. A semiconductor structure formed by such a method includes the substrate, the first material, the second material, and optionally, an oxide material between the first material and the second material. The substrate, the first material, and the second material define a continuous crystalline structure. Semiconductor structures, memory devices, and systems are also disclosed.

An embodiment of a method includes fabricating a first single crystal boule having a uniform composition and grain orientation. The first uniform single crystal boule is divided into a first plurality of layered shapes. The shapes of the first plurality are stacked with at least a second plurality of layered shapes along a first axis. The second plurality of layered shapes have at least one physical aspect differing from at least one corresponding physical aspect of the first plurality of layered shapes. The first plurality of layered shapes and at least the second plurality of layered shapes are joined via a field assisted sintering technique (FAST) to form a bulk component.

An embodiment of a method includes fabricating a first single crystal boule having a uniform composition and grain orientation. The first uniform single crystal boule is divided into a first plurality of layered shapes. The shapes of the first plurality are stacked with at least a second plurality of layered shapes along a first axis. The second plurality of layered shapes have at least one physical aspect differing from at least one corresponding physical aspect of the first plurality of layered shapes. The first plurality of layered shapes and at least the second plurality of layered shapes are joined via a field assisted sintering technique (FAST) to form a bulk component.

A manufacturing method includes providing a material that includes a plurality of particles and a binder that is uncured. The method also includes forming a first article from the material including curing the binder to bind a collection of the particles together into the first article. Furthermore, the method includes encasing at least a portion of the first article with an outer member. The outer member defines an internal cavity that corresponds to the first article. Additionally, the method includes heating the outer member and the first article to melt the collection of particles into a molten mass within the internal cavity of the outer member. Moreover, the method includes solidifying the molten mass within the outer member to form a second article. The second article corresponds to at least a portion of the internal cavity of the outer member.

A magnet structure includes columnar grains of rare earth permanent magnet phase aligned in a same direction and arranged to form bulk anisotropic rare earth alloy magnet having a boundary defined by opposite ends of the columnar grains and lacking triple junction regions, and rare earth alloy diffused onto opposite ends of the bulk anisotropic rare earth alloy magnet.

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1-xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

Provided is a method of preparing an SnSe thermoelectric material including (a) heating a mixture including Sn.sup.2+ and Se.sup.2−, (b) cooling the mixture at a cooling rate greater than 0 and equal to or less than 3 K/h, and forming single crystal Sn.sub.1-xSe (where 0<x<1), and an SnSe thermoelectric material prepared thereby and including Sn vacancies.

A method includes providing a collection of particulate material and forming a first article therefrom. Forming the first article includes forming an outer shell with an outer surface that defines an outer periphery of the first article; forming a relief area of the first article that supports the outer shell, including forming a relief void in the relief area; and collecting a collection of the particulate material within the outer shell during formation of the first article. Moreover, the method includes encasing the first article with an outer member. The outer member defines an internal cavity with an internal surface that corresponds to the outer surface of the outer shell. The method further includes heating, which deforms the first article selectively at the relief void.

An alloy comprises, by weight: nickel (Ni) as a largest constituent; 6.0% to 7.5% chromium; up to 5.0% cobalt; 5.3% to 6.5% aluminum; up to 5.0% rhenium; 3.7% to 7.0% tungsten; and 3.7% to 7.0% tantalum.

A manufacturing method includes providing a material that includes a plurality of particles and a binder that is uncured. The method also includes forming a first article from the material including curing the binder to bind a collection of the particles together into the first article. Furthermore, the method includes encasing at least a portion of the first article with an outer member. The outer member defines an internal cavity that corresponds to the first article. Additionally, the method includes heating the outer member and the first article to melt the collection of particles into a molten mass within the internal cavity of the outer member. Moreover, the method includes solidifying the molten mass within the outer member to form a second article. The second article corresponds to at least a portion of the internal cavity of the outer member.