A manufacturing method includes: (1) providing M-M′ nanowires, wherein M′ is at least one sacrificial metal different from M; and (2) subjecting the M-M′ nanowires to electrochemical de-alloying to form jagged M nanowires.

A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.

A casting method includes forming a seed. The seed has a first end and a second end and an inner diameter (ID) surface and an outer diameter (OD) surface. The seed second end is placed in contact or spaced facing relation with a chill plate. The first end is contacted with molten material. The molten material is cooled and solidified so that a crystalline structure of the seed propagates into the solidifying material. At least a portion of the seed contacted with the molten material has a solidus higher than a solidus of at least an initial pour portion of the molten material.

The invention concerns a method for manufacturing an aircraft part, the part comprising a monocrystalline nickel-based superalloy substrate, the method consecutively implementing the steps of moulding the part at a moulding temperature greater than the melting temperature of the superalloy, and cooling the part, such that the monocrystalline superalloy has a γ phase and a γ phase, solution heat treatment of the part at a first temperature between the solves temperature of the γ′ phase and the melting temperature of the superalloy, homogenising the crystalline structure or the part, cooling the part to ambient temperature, first tempering and second tempering.

A mould for use in manufacturing a single-crystal component by metal casting and epitaxial growth, includes a cavity in which the component is to be formed and a housing having an elliptical cross-section in which a single-crystal seed is disposed, the seed having an elliptical cross-section defined by a minor axis and by a major axis, the housing being in fluid communication with the cavity via an opening of circular cross-section through which molten metal is to flow, the single-crystal seed and the opening being centred on the same vertical axis, in which the minor axis and the major axis of the cross-section of the seed are oriented as a function of the secondary crystallographic orientations of the single-crystal forming the single-crystal seed.

A substrate is provided with a monocrystalline silicon-germanium layer with a first surface covered by a protective oxide obtained by wet process and having a degradation temperature. The protective oxide is transformed into fluorinated salt which is then eliminated. The substrate is placed in a processing chamber at a lower temperature than the degradation temperature and is subjected to a temperature ramp up to a higher temperature than the degradation temperature. The first surface is annealed in a hydrogen atmosphere devoid of silicon, germanium and precursors of the materials forming the target layer. When the temperature ramp is applied, a silicon precursor is inserted in the processing chamber between a loading temperature and the degradation temperature to deposit a monocrystalline buffer layer. A mono-crystalline target layer is deposited by chemical vapour deposition.

A substrate is provided with a monocrystalline silicon-germanium layer with a first surface covered by a protective oxide obtained by wet process and having a degradation temperature. The protective oxide is transformed into fluorinated salt which is then eliminated. The substrate is placed in a processing chamber at a lower temperature than the degradation temperature and is subjected to a temperature ramp up to a higher temperature than the degradation temperature. The first surface is annealed in a hydrogen atmosphere devoid of silicon, germanium and precursors of the materials forming the target layer. When the temperature ramp is applied, a silicon precursor is inserted in the processing chamber between a loading temperature and the degradation temperature to deposit a monocrystalline buffer layer. A mono-crystalline target layer is deposited by chemical vapour deposition.

A method includes providing a p-type S/D epitaxial feature and an n-type source/drain (S/D) epitaxial feature, forming a semiconductor material layer over the n-type S/D epitaxial feature and the p-type S/D epitaxial feature, processing the semiconductor material layer with a germanium-containing gas, where the processing of the semiconductor material layer forms a germanium-containing layer over the semiconductor material layer, etching the germanium-containing layer, where the etching of the germanium-containing layer removes the germanium-containing layer formed over the n-type S/D epitaxial feature and the semiconductor material layer formed over the p-type S/D epitaxial feature, and forming a first S/D contact over the semiconductor material layer remaining over the n-type S/D epitaxial feature and a second S/D contact over the p-type S/D epitaxial feature. The semiconductor material layer may have a composition similar to that of the n-type S/D epitaxial feature.

A method includes providing a p-type S/D epitaxial feature and an n-type source/drain (S/D) epitaxial feature, forming a semiconductor material layer over the n-type S/D epitaxial feature and the p-type S/D epitaxial feature, processing the semiconductor material layer with a germanium-containing gas, where the processing of the semiconductor material layer forms a germanium-containing layer over the semiconductor material layer, etching the germanium-containing layer, where the etching of the germanium-containing layer removes the germanium-containing layer formed over the n-type S/D epitaxial feature and the semiconductor material layer formed over the p-type S/D epitaxial feature, and forming a first S/D contact over the semiconductor material layer remaining over the n-type S/D epitaxial feature and a second S/D contact over the p-type S/D epitaxial feature. The semiconductor material layer may have a composition similar to that of the n-type S/D epitaxial feature.

A method for additive manufacturing of an article having a controlled magnetic anisotropy includes: forming a metallic layer of the article using additive manufacturing, the metallic layer having a magnetic anisotropy aligned in a first direction; forming a subsequent metallic layer of the article using additive manufacturing, the subsequent metallic layer having the magnetic anisotropy aligned in a second direction different from the first direction; and repeating the forming of subsequent metallic layers of the article to form at least a portion of the article, each subsequent metallic layer having the magnetic anisotropy aligned in a different direction than a previous metallic layer.