Provided is a Mg.sub.2Si single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A Mg.sub.2Si single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.

A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.

A method includes flowing first precursors over a semiconductor substrate to form an epitaxial region, the epitaxial region includes a first element and a second element; converting a second precursor into first radicals and first ions; separating the first radicals from the first ions; and flowing the first radicals over the epitaxial region to remove at least some of the second element from the epitaxial region.

The cathode member for electron beam generation of the present disclosure includes: 95% by area or more of a single phase or two phases of a compound composed of iridium and cerium. A total content of one or more subcomponents of metallic iridium and an oxide of one or more elements of iridium and cerium is 5% by area or less of the cathode member.

The cathode member for electron beam generation of the present disclosure includes: 95% by area or more of a single phase or two phases of a compound composed of iridium and cerium. A total content of one or more subcomponents of metallic iridium and an oxide of one or more elements of iridium and cerium is 5% by area or less of the cathode member.

A film forming method of forming a titanium silicide film in a contact forming region of a substrate includes: preparing the substrate having the contact forming region; and forming the titanium silicide film in the contact forming region of the substrate by atomic layer deposition (ALD) by sequentially supplying TiI.sub.4 gas as a Ti precursor and a Si-containing gas as a reducing gas to the substrate.

A turbomachine part includes (i) a nickel-based superalloy substrate including, in mass content, 5.0% to 8.0% cobalt, 6.5% to 10% chromium, 0.5% to 2.5% molybdenum, 5.0% to 9.0% tungsten, 6.0% to 9.0% tantalum, 4.5% to 5.8% aluminum, hafnium in a mass content greater than or equal to 2000 ppm, and optionally including niobium in a mass content less than or equal to 1.5%, and optionally at least one of carbon, zirconium and boron each in a mass content less than or equal to 100 ppm, the remainder being composed of nickel and unavoidable impurities; and (ii) a β-structured nickel aluminide coating covering the substrate.

A turbomachine part includes (i) a nickel-based superalloy substrate including, in mass content, 5.0% to 8.0% cobalt, 6.5% to 10% chromium, 0.5% to 2.5% molybdenum, 5.0% to 9.0% tungsten, 6.0% to 9.0% tantalum, 4.5% to 5.8% aluminum, hafnium in a mass content greater than or equal to 2000 ppm, and optionally including niobium in a mass content less than or equal to 1.5%, and optionally at least one of carbon, zirconium and boron each in a mass content less than or equal to 100 ppm, the remainder being composed of nickel and unavoidable impurities; and (ii) a β-structured nickel aluminide coating covering the substrate.

The present disclosure provides a TiCB—Al seed alloy, a manufacturing method thereof and a heritable aluminum alloy. The TiCB—Al seed alloy includes an Al matrix and TiC.sub.B@TiBC seed crystals dispersed on the Al matrix, wherein the TiC.sub.B@TiBC seed crystal comprises a core part and a shell part, the core part contains B-doped TiC.sub.B, and the shell part covers at least a part of the core part and contains a TiBC ternary phase, wherein the B-doped TiC.sub.B refers to a TiC.sub.B phase formed by B atoms occupying C vacancies in a TiC.sub.x crystal, and the TiBC ternary phase refers to a ternary phase composed of Ti, B and C, wherein x<1.

The present disclosure provides a TiCB—Al seed alloy, a manufacturing method thereof and a heritable aluminum alloy. The TiCB—Al seed alloy includes an Al matrix and TiC.sub.B@TiBC seed crystals dispersed on the Al matrix, wherein the TiC.sub.B@TiBC seed crystal comprises a core part and a shell part, the core part contains B-doped TiC.sub.B, and the shell part covers at least a part of the core part and contains a TiBC ternary phase, wherein the B-doped TiC.sub.B refers to a TiC.sub.B phase formed by B atoms occupying C vacancies in a TiC.sub.x crystal, and the TiBC ternary phase refers to a ternary phase composed of Ti, B and C, wherein x<1.