The present disclosure provides a TiCB-Al seed alloy, a manufacturing method thereof and a heritable aluminum alloy. The TiCB-Al seed alloy includes an Al matrix and TiC.sub.B@TiBC seed crystals dispersed on the Al matrix, wherein the TiC.sub.B@TiBC seed crystal comprises a core part and a shell part, the core part contains B-doped TiC.sub.B, and the shell part covers at least a part of the core part and contains a TiBC ternary phase, wherein the B-doped TiC.sub.B refers to a TiC.sub.B phase formed by B atoms occupying C vacancies in a TiC.sub.x crystal, and the TiBC ternary phase refers to a ternary phase composed of Ti, B and C, wherein x<1.

Methods are provided that include depositing a nickel-base superalloy powder including gamma nickel solid solution and gamma prime (Ni.sub.3Al) solid solution phases onto a seed crystal having a predetermined primary orientation, fully melting the powder and a portion of the seed crystal at a superliquidus temperature to form an initial layer having the predetermined primary orientation, heat treating the layer at subsolvus temperatures to precipitate gamma prime solid solution phase particles, depositing additional powder over the layer, melting the deposited powder and a portion of the initial layer at a superliquidus temperature to form a successive layer having the predetermined primary orientation, heat treating the layer at a subsolvus temperature to precipitate gamma prime solid solution phase particles, and repeating depositing additional powder, melting the additional powder and the portion of the successive layer at the superliquidus temperature, and heat treating the successive layer at a subsolvus temperature.

A p-type thermoelectric material according to one aspect of the present invention is configured such that at least any one of a Mg site, a Si site, a Sn site and/or a Ge site in a compound composed of magnesium (Mg), silicon (Si), tin (Sn) and germanium (Ge) is substituted with any one or more elements selected from the group consisting of alkali metals of group 1A and gold (Au), silver (Ag), copper (Cu), zinc (Zn), calcium (Ca) and gallium (Ga) of group 1B.

A stack includes a substrate, a magnetic recording layer having a columnar structure, and an interlayer disposed between the substrate and the magnetic recording layer. The columnar structure includes magnetic grains separated by a crystalline segregant or a combination of crystalline and amorphous segregants.

Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.

Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.

A method is provided for manufacturing a component. This method includes additively manufacturing a crucible for casting of the component. A metal material is directionally solidified within the crucible to form a metal single crystal material. A sacrificial core is removed to reveal a metal single crystal component with internal passageways. A component is provided for a gas turbine engine that includes a metal single crystal material component with internal passageways. The metal single crystal material component was additively manufactured of a metal material concurrently with a core that forms the internal passageways. The metal material was also remelted and directionally solidified.

A directional solidification casting assembly includes a directional solidification mold having an interior chamber with a shape of an object to be cast using directional solidification of molten metal in a growth direction of the mold and a feed line conduit. The conduit is fluidly coupled with a container source of the molten metal and is coupled with the mold at a gating. The feed line conduit conveys the molten metal into the mold through the gating for directional solidification of the object to be cast in the mold. At least a downstream portion of the feed line conduit that is between the intermediate location of the feed line conduit and the second open end of the feed line conduit is located below the gating along the growth direction of the mold.

A method of forming an epitaxial layer on a substrate such as a sapphire wafer that does not readily absorb thermal radiation. The method includes coating a first side surface of the substrate with an energy-absorbing opaque material. The opaque material forms a thermally absorptive coating on the substrate. The coated substrate may be heated to remove contaminants from the thermally absorptive coating. The coated substrate is positioned in a vacuum deposition chamber and heated by directing radiative energy onto the thermally absorptive coating. An epitaxial layer such as GaN or SiGe is formed on a second side surface of the substrate opposite the thermally absorptive coating.

A method of forming an epitaxial layer on a substrate such as a sapphire wafer that does not readily absorb thermal radiation. The method includes coating a first side surface of the substrate with an energy-absorbing opaque material. The opaque material forms a thermally absorptive coating on the substrate. The coated substrate may be heated to remove contaminants from the thermally absorptive coating. The coated substrate is positioned in a vacuum deposition chamber and heated by directing radiative energy onto the thermally absorptive coating. An epitaxial layer such as GaN or SiGe is formed on a second side surface of the substrate opposite the thermally absorptive coating.