An internal gas heating system apparatus enables operation of a large diameter horizontal chemical vapor processing tube reactor in the manufacture of nanomaterials, such as silicon nanowires (SiNWs) or vertically aligned carbon nanotubes on at least one catalytically active substrate. Where the nanomaterials are SiNWs, they may have controlled length, dopant level incorporation, and lower and narrower diameter distribution that on average is not greater than 50% of the average catalytic Au nanoparticle size deposited on the catalytically active substrate(s) before the SiNW growth phase.

An epitaxial growing device to increase the speed of epitaxial deposition comprises a cavity comprising a reaction chamber, a gas supply unit, a vacuum pumping unit, a first electrode, a second electrode, and a carbon nanotube structure. A gas supply unit and the vacuum pumping unit are connected to the reaction chamber, the first electrode, the second electrode, and the carbon nanotube structure being located in the reaction chamber. The carbon nanotube structure is electrically connected to the first electrode and the second electrode and suspended through the first electrode and the second electrode and is heatable in itself. A method for growing an epitaxial layer using such device is also provided.

A floating catalyst chemical vapor deposition method for producing nanotubes, the method including: supplying a nanotube-material precursor and a catalyst precursor, heating said precursors and injecting said precursors into a heated reaction chamber containing a process gas; pyrolyzing the catalyst precursor within the reaction chamber to produce catalyst particles; and pyrolyzing the nanotube-material precursor within the reaction chamber in the presence of the catalyst particles in order to produce nanotubes; wherein the method further comprises controlling the size of the catalyst particles at the point of pyrolysis of the nanotube-material precursor by controlling the operational parameters of the reaction chamber and/or of the precursor supplies. A corresponding system for producing nanotubes is also provided. Further provided is an injector subsystem for attachment to a reaction chamber, the injector subsystem comprising: a first portion having a first set of injection pipes for receiving species for delivery into the reaction chamber; and an interface portion that is removably attachable between the first portion and the reaction chamber in use, the interface portion comprising at least one injection pipe arranged to receive the species provided by the first set of injection pipes and to inject said species into the reaction chamber in use; the injector subsystem being operable in use such that, with the interface portion removed, said first set of injection pipes are operable to individually inject their respective species into the reaction chamber, and with the interface portion attached, a pre-mixing chamber is defined by the interface portion in combination with the first portion, for pre-mixing the species provided by the first set of injection pipes prior to the species entering the at least one injection pipe of the interface portion.

A CNT production apparatus 1 provided by the present invention includes a cylindrical chamber 10 and a control valve 60 provided to a gas discharge pipe 50. The chamber 10 includes a reaction zone provided in a partial range of the chamber 10 in the direction of the cylinder axis, a deposition zone 22 which is provided downstream of the reaction zone 20, and a deposition state detector 40 that detects a physical property value indicating a deposition state of carbon nanotubes in the deposition zone 22. The apparatus is configured to close the control valve 60 and deposit carbon nanotubes in the deposition zone 22 when the physical property value detected by the deposition state detector 40 is equal to or less than a predetermined threshold value, and configured to open the control valve 60 and recover the carbon nanotubes deposited in the deposition zone 22 when the physical property value exceeds the predetermined threshold value.

The present invention generally relates to nanoscale wires, including anisotropic deposition in nanoscale wires. In one set of embodiments, material may be deposited on certain portions of a nanoscale wire, e.g., anisotropically. For example, material may be deposited on a first facet of a crystalline nanoscale wire but not on a second facet. In some cases, additional materials may be deposited thereon, and/or the portions of the nanoscale wire may be removed, e.g., to produce vacant regions within the nanoscale wire, which may contain gas or other species. Other embodiments of the invention may be directed to articles made thereby, devices containing such nanoscale wires, kits involving such nanoscale wires, or the like.

One embodiment of the present disclosure provides a method for producing an angle-independent colloidal particles-based structure, the method having: preparing two or more types of hollow colloidal particles, wherein the types are distinguished based on a size of the hollow colloidal particles thereof, wherein the types have different particle sizes; and dispersing the at least two types of hollow colloidal particles to produce an amorphous structure, wherein the amorphous structure realizes the same color independently of an angle of an incident light thereto.

A reactor and method for seeded growth of nano-products such as carbon nanotubes, wires and filaments in which selected precursors are introduced into the reactor which is heated to a temperature sufficient to induce nano-product formation from interaction between the precursor gases and a nanopore templated catalyst. The selected precursors are segregated in the reactor through a plate defining two chambers which are sealed off from each other except for a void space provided in the plate. The void space is closed off by a membrane having nanopores and a catalyst formed as a layer. Atomic transfer of material from the selected precursors to form the nano-products on the catalyst layer in the other of the chambers occurs by diffusion through the catalyst layer to form the nano-product on the other of the chambers absent a pressure drop between the two chambers.

A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900 C., a deposition temperature of 200-850 C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.

Provided are an anode active material including carbon-based particles, silicon nanowires grown on the carbon-based particles, and a carbon coating layer on surfaces of the carbon-based particles and the silicon nanowires, and a method of preparing the anode active material. Since the anode active material of the present invention is used in a lithium secondary battery, physical bonding force between the carbon-based particles and the silicon nanowires may not only be increased but conductivity may also be improved. Thus, lifetime characteristics of the battery may be improved.

A one-dimensional titanium nanostructure and a method for fabricating the same are provided. A titanium metal reacts with titanium tetrachloride to form the one-dimensional titanium nanostructure on a heat-resistant substrate in a CVD method and under a reaction condition of a reaction temperature of 300-900 C., a deposition temperature of 200-850 C., a flow rate of the carrier gas of 0.1-50 sccm and a reaction time of 5-60 hours. The titanium nanostructure includes titanium nanowires, titanium nanobelts, flower-shaped titanium nanowires, titanium nanorods, titanium nanotubes, and titanium-titanium dioxide core-shell structures. The titanium nanostructure can be densely and uniformly grown on the heat-resistant substrate. The present invention neither uses a template nor uses the complicated photolithographic process, solution preparation process, and mixing-coating process. Therefore, the process scale-up, cost down, and the simplified production process are achieved.