Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs.sub.(1-y)Sb.sub.y, where y=about 0.03-0.07 and the first shell is formed from GaAs.sub.(1-x)Sb.sub.xN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga.sub.1-mAl.sub.mAs, where m=0-0.2. Some nanowires have the structure GaAs.sub.(0.93-0.97)Sb.sub.(0.03-0.07)/GaAs.sub.(0.66-0.73)Sb.sub.(0.27-0.34)N/Ga.sub.(0.8-1)Al.sub.(0-0.2)As.

A method for producing homoepitaxial diamond layers is provided. A substrate comprising diamond and having a first side and an opposite second side is provided, at least the first side having a [100] orientation. Protruding structures are provided on the first side by masking and subsequently etching the substrate. Diamond is deposited from an activated process gas on the first side of the substrate, wherein pyramids are produced around the protruding structures, the side faces of which are at least partially [111]-oriented.

A method for fabricating a nanostructure utilizes a templated monocrystalline substrate. The templated monocrystalline substrate is energetically (i.e., preferably thermally) treated, with an optional precleaning and an optional amorphous material layer located thereupon, to form a template structured monocrystalline substrate that includes the monocrystalline substrate with a plurality of epitaxially aligned contiguous monocrystalline pillars extending therefrom. The monocrystalline substrate and the plurality of epitaxially aligned contiguous monocrystalline pillars may comprise the same or different monocrystalline materials. The method provides the nanostructure where when the monocrystalline substrate and the plurality of epitaxial aligned contiguous monocrystalline pillars comprise different monocrystalline materials having a bulk crystal structure mismatch of up to about 10 percent, lattice mismatch induced crystal structure defects may be avoided interposed between the monocrystalline substrate and the plurality of epitaxially aligned contiguous monocrystalline pillars, which may have an irregular sidewall shape.

According to one embodiment, a scintillator includes a first layer provided on a surface of a substrate and including thallium activated cesium iodide; and a second layer provided on the first layer and including thallium activated cesium iodide. The second layer includes crystals having a [001] orientation partially diverted from a direction perpendicular to the surface of the substrate. Half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.

A method of processing a SiC single crystal includes a measuring step of measuring a shape of an atomic arrangement plane of the SiC single crystal along at least a first direction passing through a center in plan view and a second direction orthogonal to the first direction; and a surface processing step of processing a first plane serving as an attachment plane of the SiC single crystal, in which the surface processing step includes a grinding step of grinding the first plane, and in the grinding step, a difference is given to a surface state between the first plane and a second plane facing the first plane, and the atomic arrangement plane is flattened by Twyman's effect.

A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.

A method of producing nanoparticles comprises effecting conversion of a molecular cluster compound to the material of the nanoparticles. The molecular cluster compound comprises a first ion and a second ion to be incorporated into the growing nanoparticles. The conversion can be effected in the presence of a second molecular cluster compound comprising a third ion and a fourth ion to be incorporated into the growing nanoparticles, under conditions permitting seeding and growth of the nanoparticles via consumption of a first molecular cluster compound.

The present disclosure relates to a method of manufacturing a transferable lamella comprising interconnected nanostructures, the method comprising the steps of: a) providing a substrate such as a planar substrate; b) forming at least one superstructure on the substrate, said superstructure comprising a plurality of elongated nanostructures (formed e.g. by growth, deposition, and/or etching); wherein the elongated nanostructures are formed such that at least two of said nanostructures are conductively interconnected, and/or wherein at least a first layer is grown or deposited to conductively interconnect or insulate at least a part of the elongated nanostructures; c) encapsulating at least a portion of said superstructure in an encapsulating material, said portion comprising at least two interconnected nanostructures; and d) cutting the encapsulating material in a direction that intersects at least two interconnected nanostructures, thereby manufacturing a transferable lamella comprising interconnected nanostructures. The present disclosure further relates to an electronic device manufactured from one or more of the lamellas provided by the method.

Compositions comprising Group V/III nanowires, and methods of making such nanowires are described. Some compositions comprise one or more core-shell nanowires comprising a core and a first shell surrounding or substantially surrounding the core. The core is formed from GaAs.sub.(1?y)Sb.sub.y, where y=about 0.03-0.07 and the first shell is formed from GaAs.sub.(1?x)Sb.sub.xN, where x=0.27-0.34. The nanowires have an average emission maximum of 1.4-1.7 ?m. Some nanowires further comprise a second shell surrounding or substantially surrounding the first shell. The second shell is formed from a Group V/III material such as Ga.sub.1?mAl.sub.mAs, where m=0-0.2. Some nanowires have the structure GaAs.sub.(0.93-0.97)Sb.sub.(0.03-0.07)/GaAS.sub.(0.66-0.73)Sb.sub.(0.27-0.34)N/Ga.sub.(0.8-1)Al.sub.(0-0.2)As.

A polycrystalline silicon column is provided. The polycrystalline silicon column includes a plurality of silicon grains grown along a crystal-growing direction. In the crystal-growing direction, the average grain size of the silicon grains and the resistivity of the polycrystalline silicon column have opposite variation in their trends, the average grain size of the silicon grains and the oxygen content of the polycrystalline silicon column have opposite variation in their trends, and the average grain size of the silicon grains and the defect area ratio of the polycrystalline silicon column have the same variation in their trends. The overall average defect area ratio of the polycrystalline silicon column is less than or equal to 2.5%.